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mocvd Datasheet PDF File

For mocvd Found Datasheets File :: 117 Search Time::1.328ms
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				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	ML64116R ML6XX16 ML60116 ML60116R
OCR Text	...0mW. ML6XX16 is produced by the mocvd crystal growth method which is excellent in mass production and characteristics uniformity. This is a high -performance, highly reliable, and long life semiconductor laser. Built-in monitor photodiod...
Description	LASER DIODES FOR OPTICAL INFORMATION SYSTEMS
File Size	33.42K / 2 Page	View it Online	Download Datasheet

				SONY
Part No.	SLD202U-3/V-3
OCR Text	mocvd. features high power laser diode with the excellent general purpose application communications, optical disc structure algaas double-hetero laser diode, pin photo diode included for monitoring the laser radiant power output recommende...
Description	50mW High Power Laser Diode
File Size	74.79K / 4 Page	View it Online	Download Datasheet

				JDS Uniphase Corporation
Part No.	24-00135 24-00150 24-00178 24-00181 24-00166 24-00168 24-00138 24-00141 24-00167 24-00171 24-00144 24-00172 24-00173 24-00147 24-00179 24-00180
OCR Text	mocvd quantum well design ? open heat sink packages and encapsulated devices ? high reliability the 24xx series diode lasers represent a breakthrough in high continuous wave (cw) optical power and ultra high brightness with unsurpassed reli...
Description	Diode Lasers, High Brightness 0.6 to 8.5 W, 8xx nm
File Size	517.62K / 11 Page	View it Online	Download Datasheet

				JDS Uniphase Corporation
Part No.	54-00206 54-00212 54-00203 54-00205 54-00207 54-00210 54-00214 54-00202 54-00211 54-00204 54-00213 63-00352
OCR Text	mocvd quantum well design ? high reliability the 63xx series diode lasers represent an advancement in high continuous-wave (cw) optical power and ultrahigh brightness with unsurpassed reliability. the small emitting aperture, combined with ...
Description	Diode Lasers,High Brightness 10 W, 9xx nm
File Size	313.49K / 5 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	LX5510 LX551005 LX5510LQ-TR
OCR Text	... transistor (hbt) ic process (mocvd). with single low voltage supply of 3.3v 20 db power gain between 2.4-2.5ghz, at a low quiescent current of 65ma. for +19dbm ofdm output power (64qam, 54mbps), the pa provides a low evm (error-v...
Description	InGaP HBT 2.4 ?2.5 GHz Power Amplifier
File Size	323.49K / 9 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	LX5516 LX5516LL
OCR Text	...ransistor (hbt) ic process (mocvd). with single low voltage supply of 3.3v, it delivers 29db power gain between 2.4-2.5ghz, at a low quiescent current of 80ma. for 18dbm ofdm output power (64qam, 54mbps), the pa...
Description	InGaP HBT 2.4 - 2.5 GHz Power Amplifier Module
File Size	105.66K / 3 Page	View it Online	Download Datasheet

				SONY
Part No.	SLD201U/V
OCR Text	mocvd. features high power laser diode with the excellent general purpose application optical disc, laser printer structure algaas double-hetero laser diode, pin photo diode included for monitoring the laser radiant power output recommended...
Description	20mW High Power Laser Diode
File Size	74.77K / 4 Page	View it Online	Download Datasheet

				SONY
Part No.	SLD202U/V
OCR Text	mocvd. features high power laser diode with the excellent general purpose application communications, optical disc structure algaas double-hetero laser diode, pin photo diode included for monitoring the laser radiant power output recommende...
Description	25mW High Power Laser Diode
File Size	74.78K / 4 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	MWS11-GB11-XX
OCR Text	...olar transistor (hbt) process (mocvd). this rfic amplifier was designed as an easily cascadable 50 ohm gain block. the device is self-contained with 50 ohm input and output impedance. applications in- clude if and rf amplification i...
Description	InGaP HBT Gain Block
File Size	79.34K / 6 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	LX5501BSE
OCR Text	...olar transistor (hbt) process (mocvd). designed as an easily cascadable 50- ohm internally matched gain block, the lx5501b can be used for if and rf amplification in wireless / wired voice and data communication products and broadb...
Description	InGAP HBT Gain Block TM
File Size	139.68K / 6 Page	View it Online	Download Datasheet

For mocvd Found Datasheets File :: 117 Search Time::1.328ms
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