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LT1939E PSN1260A CY8C204 54AEN 2SA968 SLRC400 MICONDUC 12025B12
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    SG1731 SG1731J SG2731 SG2731J SG2731N SG3731 SG3731J SG3731N SG1731J_883B SG1731J/883B

Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
Part No. SG1731 SG1731J SG2731 SG2731J SG2731N SG3731 SG3731J SG3731N SG1731J_883B SG1731J/883B
OCR Text ... between +VS and -VS must be at least 7.0V; but no more than 44V. 2. The voltage between +VO and -VO must be at least 5.0V; but no more than 44V. 3. +VO must be at least 5V more positive than -VS. This eliminates the combination of a single...
Description DC MOTOR PULSE WIDTH MODULATOR BRUSH DC MOTOR CONTROLLER, 0.4 A, CDIP16
From old datasheet system

File Size 139.77K  /  5 Page

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    ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. M34D64-WMN6T M34D64-R M34D64-RDW6T M34D64-RMN6T M34D64-WDW6T M34D64-W M34D64 M34D64-RMN6
OCR Text ...s to be looked for on the three least significant bits (b3, b2, b1) of the 7-bit Device Select Code. These inputs must be tied to V CC or VSS, to establish the Device Select Code. Write Control (WC) The hardware Write Control pin (WC) is us...
Description 64 KBIT SERIAL I²C BUS EEPROM WITH HARDWARE WRITE CONTROL ON TOP QUARTER OF MEMORY
64 Kbit Serial I2C Bus EEPROM With Hardware Write Control on Top Quarter of Memory

File Size 137.91K  /  21 Page

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    W332M64V-125BI W332M64V-125BC W332M64V-125BM W332M64V-133BC W332M64V-133BI W332M64V-133BM W332M64V-100BC W332M64V-100BI

WEDC[White Electronic Designs Corporation]
Part No. W332M64V-125BI W332M64V-125BC W332M64V-125BM W332M64V-133BC W332M64V-133BI W332M64V-133BM W332M64V-100BC W332M64V-100BI W332M64V-100BM W332M64V-XBX
OCR Text ...is set to eight. The remaining (least significant) address bit(s) is (are) used to select the starting location within the block. Full-page bursts wrap within the page if the boundary is reached Initialization SDRAMs must be powered up ...
Description 32Mx64 Synchronous DRAM

File Size 265.28K  /  15 Page

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    W332M64V-133SBC W332M64V-100SBC W332M64V-100SBI W332M64V-100SBM W332M64V-133SBI W332M64V-133SBM W332M64V-XSBX W332M64V-1

WEDC[White Electronic Designs Corporation]
Part No. W332M64V-133SBC W332M64V-100SBC W332M64V-100SBI W332M64V-100SBM W332M64V-133SBI W332M64V-133SBM W332M64V-XSBX W332M64V-125SBC W332M64V-125SBI W332M64V-125SBM
OCR Text ...is set to eight. The remaining (least significant) address bit(s) is (are) used to select the starting location within the block. Full-page bursts wrap within the page if the boundary is reached Initialization SDRAMs must be powered up ...
Description 32Mx64 Synchronous DRAM

File Size 252.04K  /  15 Page

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    DAC3164IRGCR DAC3154 DAC3154IRGCR DAC3154IRGCT

Pan Jit International Inc.
Pan Jit International I...
Part No. DAC3164IRGCR DAC3154 DAC3154IRGCR DAC3154IRGCT
OCR Text ...n a 0 ma current source and the least positive voltage on the ioutap pin. ioutbp/n 53/54 o b-channel dac current output. an offset binary data pattern of 0x0000 at the dac input results in a full scale current source and the most positive v...
Description Dual 12-/10-Bit 500 MSPS Digital-to-Analog Converters

File Size 1,213.22K  /  46 Page

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    W332M72V-133BM W332M72V-100BC W332M72V-100BI W332M72V-100BM W332M72V-XBX W332M72V-125BC W332M72V-125BI W332M72V-125BM W3

WEDC[White Electronic Designs Corporation]
Part No. W332M72V-133BM W332M72V-100BC W332M72V-100BI W332M72V-100BM W332M72V-XBX W332M72V-125BC W332M72V-125BI W332M72V-125BM W332M72V-133BC W332M72V-133BI
OCR Text ...s 100s period and continuing at least through the end of this period, COMMAND INHIBIT or NOP commands should be applied. Once the 100s delay has been satisfied with at least one COMMAND INHIBIT or NOP command having been applied, a PRECHARG...
Description 32Mx72 Synchronous DRAM

File Size 231.28K  /  15 Page

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    WEDC[White Electronic Designs Corporation]
Part No. W364M72V-ESSB W364M72V-125SB W364M72V-XSBX W364M72V-100SB W364M72V-100SBC W364M72V-100SBI W364M72V-100SBM W364M72V-125SBC W364M72V-125SBI W364M72V-125SBM W364M72V-ESSBC W364M72V-ESSBI W364M72V-ESSBM
OCR Text ...is set to eight. The remaining (least significant) address bit(s) is (are) used to select the starting location within the block. Full-page bursts wrap within the page if the boundary is reached. INITIALIZATION SDRAMs must be powered up...
Description 64Mx72 Synchronous DRAM

File Size 372.44K  /  16 Page

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    WEDPN8M64V-100B2C WEDPN8M64V-133B2C WEDPN8M64V-133B2I WEDPN8M64V-133B2M WEDPN8M64V-125B2C WEDPN8M64V-125B2I WEDPN8M64V-1

WEDC[White Electronic Designs Corporation]
Part No. WEDPN8M64V-100B2C WEDPN8M64V-133B2C WEDPN8M64V-133B2I WEDPN8M64V-133B2M WEDPN8M64V-125B2C WEDPN8M64V-125B2I WEDPN8M64V-125B2M WEDPN8M64V-100B2I WEDPN8M64V-100B2M WEDPN8M64V-XB2X
OCR Text ...s 100s period and continuing at least through the end of this period, COMMAND INHIBIT or NOP commands should be applied. Once the 100s delay has been satisfied with at least one COMMAND INHIBIT or NOP command having been applied, a PRECHARG...
Description 8Mx64 Synchronous DRAM

File Size 338.03K  /  15 Page

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    WEDPN8M72V-100B2M WEDPN8M72V-133B2C WEDPN8M72V-133B2I WEDPN8M72V-133B2M WEDPN8M72V-125B2C WEDPN8M72V-125B2I WEDPN8M72V-1

WEDC[White Electronic Designs Corporation]
Part No. WEDPN8M72V-100B2M WEDPN8M72V-133B2C WEDPN8M72V-133B2I WEDPN8M72V-133B2M WEDPN8M72V-125B2C WEDPN8M72V-125B2I WEDPN8M72V-125B2M WEDPN8M72V-XB2X WEDPN8M72V-100B2C WEDPN8M72V-100B2I
OCR Text ...is set to eight. The remaining (least significant) address bit(s) is (are) used to select the starting location within the block. Full-page bursts wrap within the page if the boundary is reached. 4 White Electronic Designs Corporation * (6...
Description 8Mx72 Synchronous DRAM

File Size 297.59K  /  13 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K7N163645M K7N161845M
OCR Text ... Note : A0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired. A16 50 DQPc DQc0 DQc1 VDDQ VSSQ DQc2 DQc3 DQc4 DQc5 VSSQ VDDQ DQc6 DQc7 VDD VDD VDD VSS DQd0 D...
Description 512Kx36 & 1Mx18-Bit Pipelined NtRAMTM

File Size 466.13K  /  20 Page

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