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				Electronic Theatre Controls, Inc. ETC List of Unclassifed Manufacturers
Part No.	FLC317MG-4
OCR Text	g1db=9.5dB(Typ.) High E PAE: add=37%(Typ.) High E Proven Reliability *E Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for general purpose application in the C-Band frequency range as it pro...
Description	HIGH VOLTAGE - HIGH POWER GAAS FET
File Size	481.00K / 5 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLK017XP
OCR Text	g1db = 8.0dB(Typ.) High PAE: add = 26%(Typ.) Proven Reliability Source Gate Drain DESCRIPTION The FLK017XP chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides supe...
Description	GaAs FET & HEMT Chips
File Size	54.22K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLK027XP FLK027XV
OCR Text	g1db = 7.0dB(Typ.) High PAE: add = 32%(Typ.) Proven Reliability Source Gate Drain DESCRIPTION The FLK027XP, and FLK027XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it...
Description	GAAS FET & HEMT CHIPS
File Size	93.17K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLK107XV
OCR Text	g1db = 6.5dB(Typ.) High PAE: add = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it...
Description	GaAs FET & HEMT Chips
File Size	58.38K / 4 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TIM7179-25UL
OCR Text	...m at 7.1GHz to 7.9GHz HIGH GAIN g1db=8.5dB at 7.1GHz to 7.9GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain...
Description	HIGH POWER P1dB=44.5dBm at 7.1GHz to 7.9GHz
File Size	117.53K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLM1414-12F
OCR Text	g1db = 5.0dB (Typ.) High PAE: add = 23% (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed DESCRIPTION The FLM1414-12F is a power GaAs FET that is internally matched for standard communication bands to...
Description	X, KU-BAND INTERNALLY MATCHED FET
File Size	248.29K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLM1414-4F
OCR Text	g1db = 6.0dB (Typ.) High PAE: add = 27% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed DESCRIPTION The FLM1414-4F is a power GaAs FET that is internally matched...
Description	INTERNALLY MATCHED POWER GAAS FET
File Size	300.12K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLM1414-6F
OCR Text	g1db = 6.5dB (Typ.) High PAE: add = 26% (Typ.) Low IM3 = -46dBc@Po = 26.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed DESCRIPTION The FLM1414-6F is a power GaAs FET that is internally matched...
Description	X, KU-BAND INTERNALLY MATCHED FET
File Size	291.79K / 4 Page	View it Online	Download Datasheet

				EUDYNA[Eudyna Devices Inc]
Part No.	FLU10XM
OCR Text	g1db=14.5dB (Typ.) * High PAE: add=47% (Typ.) * Hermetic Metal/Ceramic (SMT) Package * Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the PCN/PCS frequency range. This is a new pr...
Description	L-Band Medium & High Power GaAs FET
File Size	76.73K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLX257XV
OCR Text	g1db = 7.5dB(Typ.) High PAE: add = 31%(Typ.) Proven Reliability 95 40 (Unit: m) DESCRIPTION The FLX257XV chip is a power GaAs FET that is designed for general purpose applications in the X-Band frequency range as it provides su...
Description	GAAS FET & HEMT CHIPS
File Size	54.72K / 4 Page	View it Online	Download Datasheet

For g1db Found Datasheets File :: 740 Search Time::0.828ms
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