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  fet-bare Datasheet PDF File

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    C35194102 C3519.41.02

General Cable Technologies Corporation
Part No. C35194102 C3519.41.02
Description C3519, Coaxial Cable, Plenum, RG58/U Type, 19 AWG Solid Bare Copper, 95% Tinned Copper Braid

File Size 73.54K  /  3 Page

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    List of Unclassifed Man...
Part No. 8700010250
Description Minature, 28 AWG solid .013 tinned copper conductor, polypropylene insulation, bare copper braid shield

File Size 87.81K  /  3 Page

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    List of Unclassifed Man...
Part No. 1192A 1192AB59100 1192AB591000 1192AG7X1000 1192AG8M1000 1192AG7V1000 1192AB59500 1192AG7W1000
Description 24 AWG stranded (42x40) high-conductivity bare copper conductors, polyethylene insulation, tinned copper braid shield

File Size 25.00K  /  3 Page

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    C3500.41.86 C35004186

General Cable Technologies Corporation
Part No. C3500.41.86 C35004186
Description C3500, Coaxial Cable, RG59/U Type, Plenum, 20 AWG Solid Copper Clad Steel, 95% Bare Copper Braid

File Size 71.52K  /  3 Page

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    MTB10N40E MTB10N40E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB10N40E MTB10N40E-D
Description TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES

File Size 272.75K  /  10 Page

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    MTB2N40E MTB2N40E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB2N40E MTB2N40E-D
Description TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 400 VOLTS

File Size 270.98K  /  10 Page

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    MTB9N25E MTB9N25E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB9N25E MTB9N25E-D
Description TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 9.0 AMPERES 250 VOLTS

File Size 258.36K  /  10 Page

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    MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D

ON Semiconductor
Motorola, Inc.
Part No. MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D
Description TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
From old datasheet system

File Size 180.78K  /  8 Page

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    MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
Part No. MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D
Description TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS

File Size 254.33K  /  8 Page

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    MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D

ON Semiconductor
Motorola, Inc.
Part No. MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D
Description TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
From old datasheet system

File Size 251.59K  /  8 Page

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