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For es. Found Datasheets File :: 445082    Search Time::5.89ms    
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    2SB1011 B1011

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1011 B1011
OCR Text ... hFE IC 240 VCE=-5V fT I E 120 VCB=-30V f=200MHz TC=25C Forward current transfer ratio hFE -10 Ta=75C 160 Transition...s) SJD00036BED 3 Request for your special attention and precautions in using the technical ...
Description 2SB1011
Silicon PNP triple diffusion planar type

File Size 77.42K  /  4 Page

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    2SB1012 2SB1012K 2SB1012_K

HITACHI[Hitachi Semiconductor]
Part No. 2SB1012 2SB1012K 2SB1012_K
OCR Text ...rature Storage temperature C to E diode forward current Note: 1. Value at TC = 25C Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg ID* 1 1 ...s s Unit V V A A Test conditions I C = -10 mA, RBE = I E = -50 mA, IC = 0 VCB = -120 V, IE = 0 VCE ...
Description Silicon PNP Epitaxial

File Size 32.59K  /  6 Page

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    2SB1025

Hitachi Semiconductor
Part No. 2SB1025
OCR Text ...A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -100 V, IE = 0 VCE = -5 V, IC = -150 mA VCE = -5 V, I C = -500 mA (Pulse test) V ...s or any third party's patent, copyright, trademark, or other intellectual property rights for infor...
Description Silicon PNP Epitaxial

File Size 32.26K  /  6 Page

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    2SB1026

HITACHI[Hitachi Semiconductor]
Part No. 2SB1026
OCR Text ...A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -100 V, IE = 0 VCE = -5 V, IC = -150 mA VCE = -5 V, I C = -500 mA (Pulse test) V ...s or any third party's patent, copyright, trademark, or other intellectual property rights for infor...
Description Silicon PNP Epitaxial

File Size 24.16K  /  5 Page

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    2SB1027

HITACHI[Hitachi Semiconductor]
Part No. 2SB1027
OCR Text ..., IE = 0 I C = -10 mA, RBE = I E = -1 mA, IC = 0 VCB = -160 V, IE = 0 VCE = -5 V, IC = -0.15 A, pulse VCE = -5 V, IC = -0.5 A, pulse V V...s or any third party's patent, copyright, trademark, or other intellectual property rights for infor...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 29.73K  /  6 Page

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    2SB1028

HITACHI[Hitachi Semiconductor]
Part No. 2SB1028
OCR Text ..., IE = 0 I C = -10 mA, RBE = I E = -1 mA, IC = 0 VCB = -160 V, IE = 0 VCE = -5 V, IC = -0.15 A, pulse VCE = -5 V, IC = -0.5 A, pulse V V...s or any third party's patent, copyright, trademark, or other intellectual property rights for infor...
Description Silicon PNP Epitaxial

File Size 30.14K  /  6 Page

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    2SB1030 2SB1030A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1030 2SB1030A
OCR Text ... -- IC 160 VCE=-10V fT -- I E VCB=-10V Ta=25C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) -1 -3 -10 140 120 100 80 60 40 20 400 300 Ta=75C 200 25C -25C 100 - 0.3 - 0.1 - 0.03 - 0.01 - 0.01...
Description Silicon PNP epitaxial planer type(For low-frequency amplification)

File Size 37.06K  /  2 Page

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    2SB1032 2SB1032K

HITACHI[Hitachi Semiconductor]
Part No. 2SB1032 2SB1032K
OCR Text ...ent Collector peak current C to E diode forward current Collector power dissipation Junction temperature Storage temperature Note: 1. Value ...s s Unit V V A A Test conditions I C = -25 mA, RBE = I E = -200 mA, IC = 0 VCB = -120 V, IE = 0 VCE...
Description Silicon PNP Triple Diffused

File Size 35.68K  /  6 Page

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    2SB1036

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1036
OCR Text ...E -- IC 160 VCE=-5V fT -- I E VCB=-5V Ta=25C Forward current transfer ratio hFE Transition frequency fT (MHz) -10 -30 -100 140 120 100 80 60 40 20 0 0.1 Ta=75C 25C -25C - 0.3 - 0.1 - 0.03 - 0.01 - 0.1 - 0.3 25C -2...
Description Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification)

File Size 36.41K  /  2 Page

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    2SB1048

HITACHI[Hitachi Semiconductor]
Part No. 2SB1048
OCR Text ...an) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc...
Description Silicon PNP Epitaxial/ Darlington
Silicon PNP Epitaxial, Darlington

File Size 31.00K  /  6 Page

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