| |
|
 |
FREESCALE[Freescale Semiconductor, Inc]
|
| Part No. |
MW4IC915NBR1_06 MW4IC915GNBR1 MW4IC915GNBR1_06 MW4IC915NBR1
|
| OCR Text |
...uit is designed for GSM and GSM edge base station applications. It uses Freescale's newest High Voltage (26 to 28 Volts) LDMOS IC technology...tdma, N - CDMA and W - CDMA. Final Application * Typical Performance: VDD = 26 Volts, IDQ1 = 60 mA, ... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers
|
| File Size |
678.09K /
20 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Freescale Semiconductor, Inc
Freescale Semiconductor, In...
|
| Part No. |
MW6IC2015GNBR1 MW6IC2015NBR108
|
| OCR Text |
...cellular applications: GSM, GSM edge, PHS, GSM/GSM edge, CDMA tdma, CDMA, W - CDMA and TD - SCDMA. RF LDMOS WIDEBAND Final Application INTEGRATED POWER AMPLIFIERS * Typical Two - Tone Performance: VDD = 26 Volts, IDQ1 = 100 mA, IDQ2 = 170 m... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers
|
| File Size |
1,117.72K /
28 Page |
View
it Online |
Download Datasheet |
| |
|
|
飞思卡尔半导体(中国)有限公司
MOTOROLA[Motorola, Inc]
|
| Part No. |
MW4IC915MBR1 MW4IC915GMBR1 MW4IC915
|
| OCR Text |
...uit is designed for GSM and GSM edge base station applications. It uses Motorola's newest High Voltage (26 to 28 Volts) LDMOS IC technology ...tdma, N-CDMA and W-CDMA. * Typical GSM/GSM edge Performances: 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA,... |
| Description |
MW4IC915MBR1. MW4IC915GMBR1 GSM/GSM edge. N-CDMA. W-CDMA. 860-960 MHz. 15 W. 26 V RF LDMOS Wideband Integrated Power Amplifiers MW4IC915MBR1MW4IC915GMBR1的GSM / GSM的edge网络 - CDMA技术。的W - CDMA860-960兆赫15日布什26最小输LDMOS的宽带集成功率放大器
|
| File Size |
665.04K /
16 Page |
View
it Online |
Download Datasheet |
| |
|
|
FREESCALE[Freescale Semiconductor, Inc]
|
| Part No. |
MW4IC915MBR1 MW4IC915GMBR1
|
| OCR Text |
...uit is designed for GSM and GSM edge base station applications. It uses Freescale's newest High Voltage (26 to 28 Volts) LDMOS IC technology...tdma, N - CDMA and W - CDMA. Final Application * Typical Performance: VDD = 26 Volts, IDQ1 = 60 mA, ... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers
|
| File Size |
679.56K /
20 Page |
View
it Online |
Download Datasheet |
| |
|
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| Part No. |
MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1
|
| OCR Text |
...cellular applications: GSM, GSM edge, tdma, CDMA and W - CDMA. Final Application Typical Two - Tone Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, Pout = 20 Watts PEP, Full Frequency Band Power Gain -- 29 dB IMD --... |
| Description |
GSM/GSM edge, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM edge, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
| File Size |
579.33K /
12 Page |
View
it Online |
Download Datasheet |
| |
|
|
飞思卡尔半导体(中国)有限公司
|
| Part No. |
MW6IC2015GNBR1
|
| OCR Text |
...ellular applications: gsm, gsm edge, phs, tdma, cdma, w - cdma and td - scdma. final application ? typical two - tone performance: v dd = 26 volts, i dq1 = 100 ma, i dq2 = 170 ma, p out = 15 watts pep, full frequency band (1805 - 1880 ... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers 射频LDMOS宽带集成功率放大
|
| File Size |
1,126.00K /
28 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
