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Bourns, Inc.
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| Part No. |
TISP4290J3BJR-S
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| OCR Text |
... l . t n e r r u c e t t /dt 800 a/ s junction temperature t j -40 to +150 c storage temperature range t s tg -65 to +150 c notes: 1. ...series electrical characteristics, t a = 25 ? (unless otherwise noted) (continued) v (bo) ramp brea ... |
| Description |
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS 290 V, 50 A, SILICON SURGE PROTECTOR, DO-214AA
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| File Size |
526.53K /
8 Page |
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SEMTECH[Semtech Corporation]
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| Part No. |
SRV05-4.TCT SRV05-4 SRV05-4.TC
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| OCR Text |
...ll be: VC = VCC + VF + LP diESD/dt (for positive duration pulses) VC = -VF - LG diESD/dt (for negative duration pulses) ESD current reaches ...series inductance is: V = LP diESD/dt = 1X10-9 (30 / 1X10-9) = 30V Example: Consider a VCC = 5V, a t... |
| Description |
Low Capacitance TVS Diode Array
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| File Size |
285.84K /
12 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BT151-500C
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| OCR Text |
...sing t = 10 ms - 50 a 2 s di t /dt repetitive rate of rise of i tm = 20 a; i g = 50 ma; - 50 a/s on-state current after di g /dt = 50 ma/s...series c thermal resistances symbol parameter conditions min. typ. max. unit r th j-mb thermal re... |
| Description |
SCR BT151-500C<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<week 1, 2005,;
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| File Size |
118.59K /
8 Page |
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it Online |
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