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    2SA830S 2SB852K 2SD1383K

ROHM[Rohm]
Part No. 2SA830S 2SB852K 2SD1383K
OCR Text ...in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in th...1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if ...
Description High-gain Amplifier Transistor (-32V/ -0.3A)
High-gain Amplifier Transistor (-32V -0.3A)
High-gain Amplifier Transistor (-32V, -0.3A)

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    2SA836

HITACHI[Hitachi Semiconductor]
Part No. 2SA836
OCR Text ...nA Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -18 V, IE = 0 VEB = -2 V, IC = 0 VCE = -12 V, IC = -2 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector ...
Description Silicon PNP Epitaxial

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    2SA838

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SA838
OCR Text ...100 -10 220 V V MHz dB pF Unit A A *h FE Rank classification B 70 ~ 140 C 110 ~ 220 hFE Rank 1 Transistor PC -- Ta 500 -30 Ta=25C 450 -25 2SA838 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -100...
Description Silicon PNP epitaxial planer type(For high-frequency amplification Complementary to 2SC1359)

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    2SA844

ETC
Hitachi Semiconductor
Part No. 2SA844
OCR Text ...nA Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -18 V, IE = 0 VEB = -2 V, IC = 0 VCE = -12 V, IC = -2 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector ...
Description Silicon PNP Epitaxial

File Size 22.87K  /  5 Page

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    2SA872 2SA872A

HITACHI[Hitachi Semiconductor]
Part No. 2SA872 2SA872A
OCR Text A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA872, 2SA872A Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power ...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 36.33K  /  7 Page

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    2SA879

PANASONIC[Panasonic Semiconductor]
Part No. 2SA879
OCR Text ....5 V MHz pF min typ max -2 Unit A V V *h FE Rank classification Q 60 ~ 150 R 100 ~ 220 hFE Rank 3.2 W 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC-51 TO-92L Package 1 Transistor PC -- Ta 1.2 -120 Ta=25C ...
Description Silicon PNP epitaxial planer type

File Size 45.28K  /  3 Page

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    2SA886 2SA0886

PANASONIC[Panasonic Semiconductor]
Part No. 2SA886 2SA0886
OCR Text ... 0.50.1 2.30.2 3 1.760.1 V V A A W C C 1 2 Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter...
Description Power Device - Power Transistors - Others
Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)

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    2SA893 2SA893A

HITACHI[Hitachi Semiconductor]
Part No. 2SA893 2SA893A
OCR Text A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA893, 2SA893A Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power ...
Description Silicon PNP Epitaxial

File Size 23.37K  /  5 Page

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    2SA921

PANASONIC[Panasonic Semiconductor]
Part No. 2SA921
OCR Text ... mV min typ max -100 -1 Unit nA A V V V *h FE Rank classification R 180 ~ 360 S 260 ~ 520 hFE Rank 1 Transistor PC -- Ta 500 -24 Ta=25C 450 -20 IB=-50A -40A -16 -35A -30A -12 -25A -20A -8 -15A -10A -4 -5A 0 0 40 80 120 ...
Description Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)

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    2SA935

Rohm Co., Ltd.
TEL[TRANSYS Electronics Limited]
Part No. 2SA935
OCR Text ...ASE Collector current : -0.7 A ICM Collector-base voltage V(BR)CBO : -80 V Operating and storage junction temperature range TJ, Tstg: -55...1) VCE(sat) 123 unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-50A...
Description TO-92L Plastic-Encapsulated Transistors 92L塑料封装晶体

File Size 55.52K  /  1 Page

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