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				Mitsubishi Electric Corporation
Part No.	MH8S72DBFD-8
OCR Text	8,388,608-word by 72-bit ) synchronous dynamic ram mh8s72dbfd-7,-8 30 /sep. /1999 mit-ds-0351-0.0 preliminary spec. some contents are subj...row/column address in conjunction with ba.the row address is specified by a0-11.the column address...
Description	603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
File Size	956.83K / 56 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	HYS64D16000GDL-8-B HYS64D16000GDL-6-B HYS64D16000GDL-7-B HYS64D16001GDL-6-B HYS64D16001GDL-7-B HYS64D32020GDL-8-B HYS64D32020GDL HYS64D32020GDL-5-B HYS64D32020GDL-6-B HYS64D32020GDL-7-B
OCR Text	8 ] - B H Y S 64 D 1 6 0 0 x G D L - [ 6 / 7 / 8 ] - B 200- Pi n Small Outli ne Dual -In- Line Memor y Modules S O -D I M M DDR SDRAM M ...Row Precharge latency of 3 clocks, and JEDEC SPD code definiton version 0), and the Raw Card used fo...
Description	DDR SDRAM Modules - 256MB (32Mx64) PC3200 2-bank DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank DDR SDRAM Modules - 128MB (16Mx64) PC2100 1-bank DDR SDRAM Modules - 256MB (32Mx64) PC2100 2-bank 200-Pin Small Outline Dual-In-Line Memory Modules
File Size	433.11K / 31 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	HM514260CJ-8 HM514260CLJ-7 HM514260CLJ-8 HM514260CTT-7 HM514260CTT-8 HM514260CTT-6 HM514260CTT-6R HM514260C HM51S4260CTT-8 HM514260CLJ-6 HM514260CLJ-6R HM514260CLTT-6 HM514260CLTT-6R HM514260CLTT-7 HM514260CLTT-8 HM51S4260C HM51S4260CJ-6 HM51S4260CJ-6R HM51S4260CJ-7 HM51S4260CJ-8 HM51S4260CLJ-6 HM51S4260CLJ-6R HM51S4260CLJ-7 HM51S4260CLJ-8 HM51S4260CLTT-6 HM51S4260CLTT-6R HM51S4260CLTT-7 HM51S4260CLTT-8 HM51S4260CTT-6 HM51S4260CTT-6R HM51S4260CTT-7
OCR Text	...arious functions by employing 0.8 m CMOS process technology and some new CMOS circuit design technologies. The HM51(S)4260C offers fast page...Row address -Column address -Refresh address Data-in/data-out Row address strobe Column address stro...
Description	80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 262,144-WORD X 16-BIT DYNAMIC RANDOM ACCESS MEMORY 60ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
File Size	260.25K / 27 Page	View it Online	Download Datasheet

				MICRON[Micron Technology]
Part No.	MT46V64M8TG-8 MT46V64M8TG-75 MT46V32M16TG-8L MT46V32M16TG-8 MT46V64M8TG-75L MT46V128M4 MT46V128M4TG-75 MT46V128M4TG-75L MT46V128M4TG-75Z MT46V128M4TG-75ZL MT46V128M4TG-8 MT46V128M4TG-8L MT46V64M8TG-75Z MT46V64M8TG-75ZL MT46V64M8TG-8L
OCR Text	...ammable burst lengths: 2, 4, or 8 * x16 has programmable IOL/IOV. * Concurrent auto precharge option is supported * Auto Refresh and Self Re...Row Addressing BankAddressing Column Addressing 32 Meg x 4 x 4 banks 8K 8K(A0-A12) 4 (BA0, BA1) 4K(A...
Description	DOUBLE DATA RATE DDR SDRAM
File Size	2,525.94K / 68 Page	View it Online	Download Datasheet

				Infineon Technologies A... Infineon Technologies AG
Part No.	HYE25L128160AC-8 HYB25L128160AC-75
OCR Text	...rammable burst length: 1, 2, 4, 8 and full page programmable power reduction feature by partial array activation during self-refresh da...row address strobe 9 ss ground cas column address strobe 9 ddq power for dq ? s (+1.8 v) we write en...
Description	128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES 128 - Mbit同步低功率DRAMCHIPSIZE套票
File Size	832.02K / 50 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HYM71V16655HCLT8M-8 HYM71V16655HCT8M-8 HYM71V16655HCLT8M-P HYM71V16655HCT8M-P HYM71V16655HCLT8M-S HYM71V16655HCT8M-S
OCR Text	...th and burst type - 1, 2, 4 or 8 or full page for sequential burst - 1, 2, 4 or 8 for interleave burst ? programmable cas latency ; 2, 3 ...row address : ra0 ~ ra11, co lumn address : ca0 ~ ca9 auto-precharge flag : a10 /ras, /cas, /we row ...
Description	SDRAM - Unbuffered DIMM 128MB
File Size	231.78K / 14 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HYM71V16755HCLT8M-8 HYM71V16755HCT8M-8 HYM71V16755HCLT8M-P HYM71V16755HCT8M-P HYM71V16755HCLT8M-S HYM71V16755HCT8M-S
OCR Text	...th and burst type - 1, 2, 4 or 8 or full page for sequential burst - 1, 2, 4 or 8 for interleave burst ? programmable cas latency ; 2, 3 ...row address : ra0 ~ ra11, co lumn address : ca0 ~ ca9 auto-precharge flag : a10 /ras, /cas, /we row ...
Description	SDRAM - Unbuffered DIMM 128MB
File Size	234.78K / 14 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HYM71V32655HCLT8M-8 HYM71V32655HCT8M-8 HYM71V32655HCLT8M-P HYM71V32655HCT8M-P HYM71V32655HCLT8M-S HYM71V32655HCT8M-S
OCR Text	...th and burst type - 1, 2, 4 or 8 or full page for sequential burst - 1, 2, 4 or 8 for interleave burst ? programmable cas latency ; 2, 3 ...row address : ra0 ~ ra11, co lumn address : ca0 ~ ca9 auto-precharge flag : a10 /ras, /cas, /we row ...
Description	SDRAM - Unbuffered DIMM 256MB
File Size	250.58K / 14 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HYM71V32755HCLT8M-8 HYM71V32755HCT8M-8 HYM71V32755HCLT8M-P HYM71V32755HCT8M-P HYM71V32755HCLT8M-S HYM71V32755HCT8M-S
OCR Text	...th and burst type - 1, 2, 4 or 8 or full page for sequential burst - 1, 2, 4 or 8 for interleave burst ? programmable cas latency ; 2, 3 ...row address : ra0 ~ ra11, co lumn address : ca0 ~ ca9 auto-precharge flag : a10 /ras, /cas, /we row ...
Description	SDRAM - Unbuffered DIMM 256MB
File Size	255.64K / 14 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	HYE25L128800AC-8 HYB25L128800AC-7.5
OCR Text	...2mbit x16 and 4 banks x 4mbit x 8 with additional features for mobile applications. these synchronous mobile rams achieve high speed data tr...row address strobe v ss ground cas column address strobe v ddq power for dq ? s (+1.8 v) we write en...
Description	16M X 8 SYNCHRONOUS DRAM, 6 ns, PBGA54 9 X 8 MM, FBGA-54 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
File Size	403.51K / 51 Page	View it Online	Download Datasheet

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