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70ns. Datasheet PDF File

For 70ns. Found Datasheets File :: 3002 Search Time::3.187ms
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Part No.	K6T2008U2M-TF10
OCR Text	...b85 k6t2008u2m-yb10 32-tsop1 f, 70ns, 3.3v, ll 32-tsop1 f, 85ns, 3.3v, ll 32-tsop1 f, 85ns, 3.0v, ll 32-tsop1 f, 100ns, 3.0v, ll 32-stsop1 f, 70ns, 3.3v,ll 32-stsop1 f, 85ns, 3.3v,ll 32-stsop1 f, 85ns, 3.0v, ll 32-stsop1 f, 100ns, 3.0v, l...
Description	256K X 8 STANDARD SRAM, 100 ns, PDSO32
File Size	147.22K / 9 Page	View it Online	Download Datasheet


Part No.	K6F4008S2D-FF850
OCR Text	...change for twhz: 25 to 20ns for 70ns product - change for tdw: 25 to 30ns for 70ns product errata correction - removed ?ttl compatible? from features draft date march 16, 2000 april 24, 2000 october 25, 2001 revision 1.01 october 2001 k...
Description	512K X 8 STANDARD SRAM, 85 ns, PBGA48
File Size	147.33K / 9 Page	View it Online	Download Datasheet


Part No.	K6F2016S4D-FF850
OCR Text	...hange for twhz : 25 to 20ns for 70ns product - change for tdw : 25 to 30ns for 70ns product draft date january 6, 2000 april 21, 2000 revision 1.0 cmos sram april 2000 k6f2016s4d family - 2 - product family 1. the parameter is measured...
Description	128K X 16 STANDARD SRAM, 85 ns, PBGA48
File Size	160.81K / 9 Page	View it Online	Download Datasheet


Part No.	K8A3215EBE-FC7B
OCR Text	...s an 11ns burst access time and 70ns initial access time. the device performs a program opera- tion in units of single 16 bits (word) and an erase operation in units of a block. single or multiple blocks can be erased. the block erase oper...
Description	2M X 16 FLASH 1.8V PROM, 90 ns, PBGA
File Size	601.21K / 38 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K6X0808C1D-TQ55 K6X0808C1D-GF55 K6X0808C1D-DF55 K6X0808C1D-F K6X0808C1D-GF70 K6X0808C1D-GQ70 K6X0808C1D-RF55 K6X0808C1D K6X0808C1D-DF70 K6X0808C1D-GQ55 K6X0808C1D-Q K6X0808C1D-RF70 K6X0808C1D-TF55 K6X0808C1D-TF70 K6X0808C1D-TQ70
OCR Text	...C1D-Q Automotive(-40~125C) 551)/70ns 25A 25mA Operating (ICC2, Max) PKG Type 28-DIP-600B, 28-SOP-450, 28-TSOP1-0813.4F/R 28-SOP-450, 28-TSOP1-0813.4F K6X0808C1D-F Industrial(-40~85C) 1. The parameters are tested with 50pF test load...
Description	32Kx8 bit Low Power CMOS Static RAM 32Kx8位低功耗CMOS静态RAM
File Size	165.28K / 9 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K6X1008C2D-TQ55 K6X1008C2D-BF55 K6X1008C2D-GF55 K6X1008C2D K6X1008C2D-B K6X1008C2D-BB70 K6X1008C2D-BF70 K6X1008C2D-DB70 K6X1008C2D-DF55 K6X1008C2D-DF70 K6X1008C2D-F K6X1008C2D-GB55 K6X1008C2D-GQ55 K6X1008C2D-GQ70 K6X1008C2D-PB55 K6X1008C2D-PF55 K6X1008C2D-Q K6X1008C2D-TB55 K6X1008C2D-TB70 K6X1008C2D-TF55 K6X1008C2D-TQ70 K6X1008C2D-BB55 K6X1008C2D-DB55 K6X1008C2D-GB70 K6X1008C2D-GF70 K6X1008C2D-PB70 K6X1008C2D-PF70 K6X1008C2D-TF70
OCR Text	...omotive(-40~125C) 4.5~5.5V 551)/70ns Power Dissipation Vcc Range Speed Standby (ISB1, Max) 10A 15A 25A 25mA Operating (ICC2, Max) PKG Type 32-DIP-600, 32-SOP-525, 32-SOP-525 32-TSOP1-0820F 32-SOP-525, 32-TSOP1-0820F 1. The parameters are...
Description	128Kx8 bit Low Power CMOS Static RAM 128Kx8位低功耗CMOS静态RAM
File Size	175.50K / 10 Page	View it Online	Download Datasheet

For 70ns. Found Datasheets File :: 3002 Search Time::3.187ms
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