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California Eastern Laboratories, Inc.
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Part No. |
NX8341TJ-AZ NX8341UJ-AZ NX8341TB-AZ NX8341UB-AZ
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OCR Text |
...
2
1.75
(4.05)
5.15
543 OPTICAL REFERENCE PLANE
1.3
3.50.1
0.55
3.50.1
1.35
8.7
PIN CONNECTIONS
1 PD 2
5.20.05 5.20.05
30.1
5.55
5 10
G 4 LD
3 10
5- 0.30.05
2.70.2
P.C.D 5.... |
Description |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION 1 310纳米AlGaInAs多量子阱激光器的激光二极管0 Gb / s的应
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File Size |
249.68K /
13 Page |
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it Online |
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Silicon Storage Technology, Inc.
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Part No. |
SST34HF3223B-90-4C-LP SST34HF3223B-70-4C-LP SST34HF3243B-70-4E-LP SST34HF3243B-70-4C-LP SST34HF3223B-70-4E-LP
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OCR Text |
543 1 the sst logo and superflash are trademarks registered by silicon storage technology, inc. in the u.s. patent and trademark offi ce. concurrent superflash, csf, and combomemory are trademarks of silicon storage technology, inc. these s... |
Description |
KIT ISR PROGRAMMING NO WARP One-PLL General-Purpose Flash-Programmable and 2-Wire Serially Programmable Clock Generator 混合存储器|静态存储器EEPROM中|CMOS | BGA封装| 56PIN |塑料 MIXED MEMORY|SRAM EEPROM|CMOS|BGA|56PIN|PLASTIC 混合存储器|静态存储器EEPROM中|的CMOS | BGA封装| 56PIN |塑料
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File Size |
352.47K /
30 Page |
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it Online |
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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Part No. |
BF543 Q62702-F1372
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OCR Text |
543
For RF stages up to 300 MHz preferably in FM applications IDSS = 4 mA, gfs = 12 mS
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BF 543 Marking LDs Ordering Code (tape and reel) Q62702-F1372 Pin... |
Description |
From old datasheet system Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications)
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File Size |
97.28K /
5 Page |
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it Online |
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