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  500-1300 Datasheet PDF File

For 500-1300 Found Datasheets File :: 9635    Search Time::1.187ms    
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    AM50-0011 AM50-0011SMB AM50-0011TR AM50-0011TR3000

MACOM[Tyco Electronics]
Part No. AM50-0011 AM50-0011SMB AM50-0011TR AM50-0011TR3000
OCR Text ...olts Frequency MHz 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 Mag 0.48 0.51 0.53 0.54 0.57 0.58 0.59 0.60 0.61 0.63 0.64 0.64 0.66 0.66 0.67 0.68...
Description Circular Connector; No. of Contacts:56; Series:MS27505; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
LJT 128C 128#22D SKT WALL RECP
Circular Connector; No. of Contacts:128; Series:MS27505; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
High Dynamic Range LNA 800 - 1000 MHz

File Size 111.64K  /  4 Page

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    APT5014BFLL APT5014SFLL

Advanced Power Technology
Part No. APT5014BFLL APT5014SFLL
OCR Text ...C ION TT CE MA AN OR DV NF A I 500 35 140 30 40 400 3.2 300 35 30 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ -55 to 150 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.46K  /  2 Page

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    APT5014 APT5014BLL APT5014SLL

Advanced Power Technology
Part No. APT5014 APT5014BLL APT5014SLL
OCR Text ...C ION TT CE MA AN OR DV NF A I 500 35 140 30 40 400 3.2 300 32 30 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ -55 to 150 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 51.46K  /  2 Page

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    APT5015BLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
Part No. APT5015BLC
OCR Text ... ON TI ED AT NC RM VA FO AD IN 500 32 128 30 40 370 2.96 300 32 30 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Ch...
Description POWER MOS VI 500V 32A 0.150 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET

File Size 28.40K  /  2 Page

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    APT5015 APT5015BVR

ADPOW[Advanced Power Technology]
Part No. APT5015 APT5015BVR
OCR Text ... APT5015BVR UNIT Volts Amps 500 32 128 30 40 370 2.96 -55 to 150 300 32 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Tran...1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteris...
Description POWER MOS V 500V 32A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.16K  /  4 Page

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    APT5016BLL APT5016SLL APT5014 APT5014BLL APT5014SLL APT5016

ADPOW[Advanced Power Technology]
Part No. APT5016BLL APT5016SLL APT5014 APT5014BLL APT5014SLL APT5016
OCR Text ...C ION TT CE MA AN OR DV NF A I 500 30 120 30 40 325 2.6 300 30 30 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ -55 to 150 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 51.47K  /  2 Page

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    APT5016 APT5016BFLL APT5016SFLL

ADPOW[Advanced Power Technology]
Part No. APT5016 APT5016BFLL APT5016SFLL
OCR Text ...C ION TT CE MA AN OR DV NF A I 500 30 120 30 40 325 2.6 300 30 30 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ -55 to 150 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 53.90K  /  2 Page

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    APT5017BLC APT5017SLC APT10086BLC APT10086SLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5017BLC APT5017SLC APT10086BLC APT10086SLC
OCR Text ... ON TI ED AT NC RM VA FO AD IN 500 30 120 30 40 370 2.96 300 30 30 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Ch...
Description POWER MOS VI 500V 30A 0.170 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

File Size 34.77K  /  2 Page

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    APT5017BVFR

ADPOW[Advanced Power Technology]
Part No. APT5017BVFR
OCR Text ... APT5017BVFR UNIT Volts Amps 500 30 120 30 40 370 2.96 -55 to 150 300 30 30 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Curr...1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteris...
Description POWER MOS V 500V 30A 0.170 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 62.45K  /  4 Page

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    APT5017BVR

ADPOW[Advanced Power Technology]
Part No. APT5017BVR
OCR Text ... APT5017BVR UNIT Volts Amps 500 30 120 30 40 370 2.96 -55 to 150 300 30 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Tran...1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteris...
Description POWER MOS V 500V 30A 0.170 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.07K  /  4 Page

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