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For 4m 8m Found Datasheets File :: 1335 Search Time::3.609ms
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				SANYO[Sanyo Semicon Device]
Part No.	LC680100A
OCR Text	... 3 CKIN=15MHz 60 50 10 10 2 4 2 4m 10 0.4 V 0.4 20K VDD Tcyc ms 16M Hz ms 1M 10 120 100 200 Hz ms mA mA A PF PU resistor Hysterisis voltage External interrupt pulse width Reset input pulse width VCO frequency VCO lock-up time RC osci...
Description	32-Bit RISC Microcontroller CMOS IC
File Size	893.33K / 16 Page	View it Online	Download Datasheet

				Fujitsu
Part No.	MB98C813338mB-10 MB98C811232MB MB98C810131MB MB98C812334mB
OCR Text	...81233(4mB)/81333(8mB)-10 1M/2M/4m/8m-BYTE 5 V-ONLY FLASH MINIATURE CARD The Fujitsu Flash Miniature cards conform to "Miniature Card Specification" pubulished by MCIF; Miniature Card Implementers Forum. The Fujitsu Flash Miniature cards a...
Description	5V-ONLY FLASH MINIATURE CARD
File Size	268.48K / 48 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IGB15N60T
OCR Text	...1.2m J E off 0.8m J E on * 0.4m J E, SWITCHING ENERGY LOSSES E ts * E off 5A 1 0A 15 A 20A 25A 0.2 mJ E on* 0 10 20 30 40 50 60 70 80 IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a...
Description	Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
File Size	361.51K / 12 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IKB15N60T
OCR Text	...1.2m J E off 0.8m J E on * 0.4m J E, SWITCHING ENERGY LOSSES E ts * E off 5A 1 0A 15 A 20A 25A 0.2 mJ E on* 0 10 20 30 40 50 60 70 80 IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a...
Description	600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
File Size	394.61K / 13 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4H560838F K4H561638F-UCCC K4H561638F-UCC4 K4H560838F-UC K4H560838F-UCC4 K4H560838F-UCCC
OCR Text	... SDRAM 8m x 8bit x 4 Banks / 4m x 16Bit x 4 Banks Double Data Rate SDRAM The K4H560838F / K4H561638F is 268,435,456 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 8 / 16bits, fabricated with ...
Description	256Mb F-die DDR400 SDRAM Specification 256Mb的的F -模具支持DDR400内存规格
File Size	168.93K / 19 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S511632D K4S511632D-KC K4S511632D-KC_L1H K4S511632D-KC_L7C K4S511632D-KC_L75 K4S511632D-KC_L1L K4S511632D-KC/L1H K4S511632D-KC/L1L K4S511632D-KC/L75 K4S511632D-KC/L7C K4S511632D-KC1H
OCR Text	...ster LDQM Bank Select 2 x 4m x 16 2 x 4m x 16 2 x 4m x 16 2 x 4m x 16 Refresh Counter Output Buffer Row Decoder Sense AMP Row Buffer DQi A ddress Register CLK ADD Column Decoder Col. Buffer LRAS LCBR ...
Description	32M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 DDP 512Mbit SDRAM 8m x 16bit x 4 Banks Synchronous DRAM LVTTL 12兆内00万16 × 4银行同步DRAM LVTTL
File Size	44.56K / 9 Page	View it Online	Download Datasheet

				samsung
Part No.	K4S561632E
OCR Text	...4 Banks / 8m x 8Bit x 4 Banks / 4m x 16Bit x 4 Banks SDRAM FEATURES * JEDEC standard 3.3V power supply * LVTTL compatible with multiplexed address * Four banks operation * MRS cycle with address key programs -. CAS latency (2 & 3) -. Burs...
Description	IC,SDRAM,4X4mX16,CMOS,TSSOP,54PIN,PLASTIC
File Size	119.02K / 14 Page	View it Online	Download Datasheet

				Fujitsu
Part No.	MB98A81063-15 MB98A81473-15 MB98A81573-15 MB98A81273-15 MB98A81373-15
OCR Text	...8A81473-15/MB98A81573-15 1M/2M/4m/8m/16M/32M-BYTE 5V-ONLY FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD s DESCRIPTION The Fujitsu 5V-Only Flash memory cards are electrically erasable and programmable memory cards capable of storing and r...
Description	5V-ONLY ELASH MEMOEY CARD
File Size	520.44K / 51 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	HYM328020GD-60 HYM328020GD-50
OCR Text	...tline DIMM Module Utilizes four 4m x 16 -DRAMs (HYB 3165160T) 4096 refresh cycles / 64 ms Gold contact pad Semiconductor Group 195 11.94 HYM328020GD-50/-60 8m x 32 SO-DIMM The HYM 328020GD -50/-60 is a 32 MByte DRAM module or...
Description	8m x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE 8m X 32 FAST PAGE DRAM MODULE, 60 ns, ZMA72 8m x 32 Bit DRAM Module (SO-DIMM) -8m x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE
File Size	27.53K / 6 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
Part No.	HYM328020GS-60 HYM328020GS-50 HYM328020S-60 HYM328020S-50 Q67100-Q2008 HYM328020S Q67100-Q2001
OCR Text	...omprising sixteen HYB 5117400BJ 4m x 4 DRAMs in 300 mil wide SOJ-packages mounted together with sixteen 0.2 F ceramic decoupling capacitors ...8m x 32-Bit Pin Configuration Pin Names VSS DQ16 DQ17 DQ18 DQ19 N.C. A1 A3 A5 A10 DQ20 DQ21 D...
Description	8m x 32 Bit DRAM Module 8m x 32-Bit Dynamic RAM Module 8m X 32 FAST PAGE DRAM MODULE, 50 ns, SMA72 8m x 32-Bit Dynamic RAM Module 8m X 32 FAST PAGE DRAM MODULE, 60 ns, SMA72
File Size	52.29K / 10 Page	View it Online	Download Datasheet

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