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    PHILIPS[Philips Semiconductors]
Part No. BUK9624-55
OCR Text ...b); conditions: VGS 5 V Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T April 1998 3 Rev 1.000 Phili...55 100 ID/A 80 10 8 6 VGS/V = 40 5.0 4.8 4.6 4.4 gfs/S 35 30 25 20 15 10 5 60 ...
Description TrenchMOS transistor Logic level FET

File Size 67.46K  /  8 Page

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    Winbond Electronics Corp
Part No. W49F201T-55 W49F201T-45 W49F201T-55B W49F201T-45B W49F201S-45B W49F201S-55 W49F201S-55B
OCR Text ... 2 - pin configurations 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 dq15 a9 a10 a11...55 5555 80 5555 aa 2aaa 55 5555 10 main memory erase 6 5555 aa 2aaa 55 5555 80 5555 ...
Description 128K X 16 CMOS FLASH MEMORY
5015 RR 5#16S SKT RECP
5015 RR 5#12 PIN RECP

File Size 268.69K  /  23 Page

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    Philips
Part No. BUK9675-55 BUK9675-55A
OCR Text ...b); conditions: VGS 5 V Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T April 1998 3 Rev 1.100 Phili...55 50 ID/A 40 10.0 8.0 VGS/V = 6.0 5.4 5.0 4.8 4.6 4.4 4.2 4.0 3.8 3.6 3.4 3.2 3.0 2.8 2...
Description TrenchMOS(tm) transistor Logic level FET
TrenchMOS TM transistor

File Size 51.56K  /  8 Page

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    Philips
Part No. BUK7624-55 BUK7624-55_1 BUK7624-55A
OCR Text ...0.02 19 - BUK7624-55 MAX. 4.0 4.4 10 500 1 20 24 50 UNIT V V V V A A A A V m m Gate source breakdown voltage IG = 1 mA; Drain-source on-state VGS = 10 V; ID = 25 A resistance DYNAMIC CHARACTERISTICS Tmb = 25C unless otherwis...
Description TrenchMOS(tm) transistor Standard level FET
From old datasheet system
TrenchMOS TM transistor Standard level FET

File Size 51.05K  /  8 Page

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    BUK9635-55 BUK9635-56

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BUK9635-55 BUK9635-56
OCR Text ...b); conditions: VGS 5 V Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T April 1998 3 Rev 1.100 Phili...55 100 ID/A 80 VGS/V = 10 8 7 30 6.4 6.0 5.8 5.6 5.4 5.2 5.0 4.8 4.6 4.4 4.2 4.0 3.8 3....
Description TrenchMOSTM)transistor Logic level FET(TrenchMOSTM)晶体管逻辑电平FET)
TrenchMOS transistor Logic level FET

File Size 68.83K  /  8 Page

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    BUK9614-55

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK9614-55
OCR Text ...b); conditions: VGS 5 V Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T April 1998 3 Rev 1.000 Phili...55 100 ID/A 80 10 5 4 70 VGS/V = 3.8 3.6 gfs/S 60 50 60 3.4 40 3.2 40 ...
Description TrenchMOS transistor Logic level FET

File Size 51.52K  /  8 Page

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    BUK9606-55 BUK9606-55A

Philips Semiconductors
NXP Semiconductors N.V.
Part No. BUK9606-55 BUK9606-55A
OCR Text ...m w v gs = 10 v; i d = 25 a - 4.8 5.8 m w v gs = 4.5 v; i d = 25 a - - 6.7 m w dynamic characteristics t mb = 25?c unless otherwise specified symbol parameter conditions min. typ. max. unit c iss input capacitance v gs = 0 v; v ds = ...
Description TrenchMOS(TM)transistor Logic level FET(TrenchMOS(TM)晶体管逻辑电平FET)
TrenchMOS transistor Logic level FET
TrenchMOSTM)transistor Logic level FET(TrenchMOSTM)晶体管逻辑电平FET)

File Size 70.16K  /  7 Page

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    BUK7606-55 BUK7606-55A

Philips Semiconductors
3M Company
Part No. BUK7606-55 BUK7606-55A
OCR Text ... ds = v gs ; i d = 1 ma 2 3.0 4.0 v t j = 175?c 1 - - v t j = -55?c - - 4.4 v i dss zero gate voltage drain current v ds = 55 v; v gs = 0 v; - 0.05 10 m a t j = 175?c - - 500 m a i gss gate source leakage current v gs = 20 v; v ...
Description TrenchMOS(TM)transistor Standard level FET(TrenchMOS(TM)晶体管标准电平FET)
Aluminum Snap-In Capacitor; Capacitance: 2200uF; Voltage: 50V; Case Size: 22x25 mm; Packaging: Bulk
TrenchMOSTM)transistor Standard level FET(TrenchMOSTM)晶体管标准电平FET) TrenchMOS(商标)一级标准场效应晶体管(TrenchMOS(商标)晶体管标准电平场效应管)

File Size 70.00K  /  7 Page

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    Philips
Part No. BUK9520-55
OCR Text .... 1800 350 170 28 110 95 70 3.5 4.5 7.5 MAX. 2400 420 235 40 160 135 90 UNIT S pF pF pF ns ns ns ns nH nH nH VDD = 30 V; ID = 25 A; VGS =...55 MAX. 110 UNIT mJ 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Der...
Description TrenchMOS TM transistor

File Size 47.69K  /  8 Page

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    BD616LV4017AC-55 BD616LV4017AC-70 BD616LV4017ACG55 BD616LV4017ACG70 BD616LV4017ACP55 BD616LV4017ACP70 BD616LV4017AI-55 B

Electronic Theatre Controls, Inc.
ETC
BSI
Brilliance Semiconductor
Brilliance Semiconducto...
Part No. BD616LV4017AC-55 BD616LV4017AC-70 BD616LV4017ACG55 BD616LV4017ACG70 BD616LV4017ACP55 BD616LV4017ACP70 BD616LV4017AI-55 BD616LV4017AI-70 BD616LV4017AIG55 BD616LV4017AIG70 BD616LV4017AIP55 BD616LV4017AIP70 BD616LV4017DC-55 BD616LV4017DC-70 BD616LV4017DCG55 BD616LV4017DCG70 BD616LV4017DCP55 BD616LV4017DCP70 BD616LV4017DI-55 BD616LV4017DI-70 BD616LV4017DIG55 BD616LV4017DIG70 BD616LV4017DIP55 BD616LV4017DIP70 BD616LV4017EC-55 BD616LV4017EC-70 BD616LV4017ECG55 BD616LV4017ECG70 BD616LV4017ECP55 BD616LV4017ECP70 BD616LV4017EI-55 BD616LV4017EI-70 BD616LV4017EIG55 BD616LV4017EIG70 BD616LV4017EIP55 BD616LV4017EIP70 BS616LV4017 BS616LV4017AC BS616LV4017AI BS616LV4017DC BS616LV4017DI BS616LV4017EC BS616LV4017EI
OCR Text 4~5.5V * Very low power consumption : Vcc = 3.0V C-grade: 26mA (@55ns) operating current I-grade: 27mA (@55ns) operating current C-grade: 21...55 55ns -70 70ns * Automatic power down when chip is deselected * Three state outputs and TTL compat...
Description    Very Low Power/Voltage CMOS SRAM 256K X 16 bit
D-Subminiature Connector; Gender:Male; No. of Contacts:15; Contact Termination:IDC; D Sub Shell Size:DB15; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes 非常低功电压CMOS SRAM56 × 16
CONNECTOR ELECTRICAL 非常低功电压CMOS SRAM56 × 16
Very Low Power/Voltage CMOS SRAM 256K X 16 bit 非常低功电压CMOS SRAM56 × 16
D-Subminiature Connector; Gender:Male; No. of Contacts:25; Contact Termination:IDC; D Sub Shell Size:DB25; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes
D-Subminiature Connector; Gender:Male; No. of Contacts:9; Contact Termination:IDC; D Sub Shell Size:DB9; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes
Asynchronous 4M(256Kx16) bits Static RAM

File Size 263.06K  /  10 Page

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