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Infineon Technologies AG
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Part No. |
IPD22N08S2L-50
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OCR Text |
... GS=0 V, I F=22 A, T j=25 C V R=40 V, I F=I S, di F/dt =100 A/s V R=40 V, I F=I S, di F/dt =100 A/s 0.9 25 100 1.3 V A Q gs Q gd Qg V platea...50
1 Power dissipation P tot = f(T C); V GS 6 V
2 Drain current I D = f(T C); V GS 10 V
8... |
Description |
OptiMOS Power-Transistor 27 A, 75 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
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File Size |
148.49K /
8 Page |
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ROHM[Rohm]
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Part No. |
RB411VA-50
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OCR Text |
...Tj Tstg Limits 50 20 0.5 3 125 -40 to +125 Unit V V A A
Min. -
Typ. 20
Max. 0.50 0.30 30 -
Unit V V A pF
IF=500mA IF=10mA VR=10V VR=10V , f=1MHz
0.8 0.5
Features 1) Small mold type. (TUMD2) 2) High reliability.
2.0... |
Description |
Schottky barrier diode
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File Size |
130.99K /
4 Page |
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HAMAMATSU[Hamamatsu Corporation] Hamamatsu Photonics
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Part No. |
P5274-50 P2748 P2748-40 P2748-41 P2748-42 P5274 P5274-01
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OCR Text |
...perature Topr Tstg (mA) (C) (C) 40 40 -40 to +60 -55 to +60 20 40 20 40 -40 to +55 -45 to +55
I General rating / Absolute maximum ratings
Type No. P2748-40 P2748-41 P2748-42 P5274 P5274-01 P3257-50 Dimensional outline/ Window material *... |
Description |
MCT photoconductive detector
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File Size |
170.09K /
4 Page |
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it Online |
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Price and Availability
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