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3.2ma. Datasheet PDF File

For 3.2ma. Found Datasheets File :: 17841 Search Time::2.266ms
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				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S511633F-YPC K4S511633F K4S511633F-F1H K4S511633F-F1L K4S511633F-F75 K4S511633F-L K4S511633F-YC
OCR Text	3.0V & 3.3V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CA...2mA IOL = 2mA 3 1. VIH (max) = 5.3V AC.The overshoot voltage duration is 3ns. 2. VIL (min) = ...
Description	8M x 16Bit x 4 Banks Mobile SDRAM 8米16 × 4银行移动SDRAM
File Size	111.06K / 12 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S281632M-TL80 K4S281632M K4S281632M-L10 K4S281632M-L1H K4S281632M-L1L K4S281632M-L80 K4S281632M-TC K4S281632M-TC_L10 K4S281632M-TC_L1H K4S281632M-TC_L1L K4S281632M-TC_L80 K4S281632M-TC10 K4S281632M-TC1H K4S281632M-TC1L K4S281632M-TC80 K4S281632M-TL K4S281632M-TL10 K4S281632M-TL1H K4S281632M-TL1L K4S281632M-TC/L80 K4S281632M-TC/L1L K4S281632M-TC/L1H K4S281632M-TC/L10
OCR Text	...RAM FEATURES * JEDEC standard 3.3V power supply * LVTTL compatible with multiplexed address * Four banks operation * MRS cycle with addres...2mA IOL = 2mA 3 3,4 Note Notes : 1. VIH (max) = 5.6V AC.The overshoot voltage duration is 3ns. 2...
Description	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
File Size	85.96K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S280832B-TL80 K4S280832B K4S280832B-TC10 K4S280832B-TC1H K4S280832B-TC1L K4S280832B-TC75 K4S280832B-TCL10 K4S280832B-TCL1H K4S280832B-TCL1L K4S280832B-TCL75 K4S280832B-TCL80 K4S280832B-TL10 K4S280832B-TL1H K4S280832B-TL1L K4S280832B-TL75 K4S280832B-TC80
OCR Text	... BA1 A10/AP A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 4...2mA IOL = 2mA 3 Note Notes : 1. VIH (max) = 5.6V AC.The overshoot voltage duration is 3ns. 2. VI...
Description	4M x 8Bit x 4 Banks Sychronous DRAM 4米8位4银行Sychronous内存
File Size	120.23K / 10 Page	View it Online	Download Datasheet

				Panasonic Semiconductor
Part No.	SP4-DC12V SP4-DC24V SP4-DC3V SP4-DC48V SP4-DC5V SP4-DC6V SP4-L2-DC12V SP4-L2-DC24V SP4-L2-DC3V SP2-DC5V SP2-DC24V SP2-DC3V SP2-DC6V SP2-DC48V
OCR Text	...ransistor or chip controllers. 3. high reliability and long life with a structure that ensures almost perfectly complete twin contact and ...2ma 83 ? 6v dc 50ma 120 ? 12v dc 25ma 480 ? 24v dc 12.5ma 1,920 ? 48v dc 6.2ma 7,700 ? nominal coil ...
Description	2c 15A, 4c 10A polarized power relays
File Size	104.12K / 6 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280432M-TC_L80 K4S280432M K4S280432M-TC_L10 K4S280432M-TC_L1H K4S280432M-TC_L1L K4S280432M-TC/L1L K4S280432M-TC/L1H K4S280432M-TC/L80 K4S280432M-TC/L10
OCR Text	...RAM FEATURES * JEDEC standard 3.3V power supply * LVTTL compatible with multiplexed address * Four banks operation * MRS cycle with addres...2mA IOL = 2mA 3 3,4 Note Notes : 1. VIH (max) = 5.6V AC.The overshoot voltage duration is 3ns. 2...
Description	MC 7P MR 16/1 PVC GOLD RoHS Compliant: Yes 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
File Size	124.58K / 10 Page	View it Online	Download Datasheet

				FAIRCHILD SEMICONDUCTOR CORP
Part No.	BC182LBD27Z
OCR Text	...10. 1. emitter 2. collector 3. base to-92 1 ?2002 fairchild semiconductor corporation bc182lb rev. a, march 2002 thermal characteristics t a =25 c unless otherwise noted symbol parameter max. units p d total device dissipation @t a ...
Description	100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
File Size	25.27K / 4 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4M563233E-N K4M563233E K4M563233E-C K4M563233E-E K4M563233E-F1H K4M563233E-F1L K4M563233E-F75 K4M563233E-F80 K4M563233E-G K4M563233E-L K4M563233E-M K4M563233E-EE800 K4M563233E-ME800
OCR Text	3.0V & 3.3V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CA...2mA IOL = 2mA 3 Symbol VDD Min 2.7 Typ 3.0 Max 3.6 Unit V Note NOTES : 1. VIH (max) = 5.3V AC.The...
Description	2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 2米x 32Bit的4银行0FBGA移动SDRAM 8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
File Size	139.67K / 12 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4M511633E-Y K4M511633E K4M511633E-C K4M511633E-F1H K4M511633E-F1L K4M511633E-F75 K4M511633E-L K4M511633E-P K4M511633E-YC1H0
OCR Text	3.0V or 3.3V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. C...2mA IOL = 2mA 3 Symbol VDD Min 2.7 Typ 3.0 Max 3.6 Unit V Note NOTES : 1. VIH (max) = 5.3V AC.The...
Description	32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 8米16 × 4银行4FBGA移动SDRAM
File Size	110.15K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4M511533E-YPC K4M511533E K4M511533E-C K4M511533E-F1H K4M511533E-F1L K4M511533E-F75 K4M511533E-L K4M511533E-Y K4M511533E-YC K4M511533E-YP K4M511533E-YF1H0 K4M511533E-YC1L0 K4M511533E-YL1L0 K4M511533E-PF750 K4M511533E-YC750
OCR Text	3.0V or 3.3V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. C...2mA IOL = 2mA 3 Symbol VDD Min 2.7 Typ 3.0 Max 3.6 Unit V Note NOTES : 1. VIH (max) = 5.3V AC.The...
Description	Mobile-SDRAM 移动SDRAM 32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
File Size	104.22K / 12 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE906
OCR Text	...p Cascode Diff. Amp Note 2 Note 3 Collector-Substrate Capacitance (For Each Differential Amplifier) Common-Mode Rejection Ratio AGC Range, O...2mA - - - - 0.25 0.3 13.5 1.1 - - 33 - mV A A V/C V(BR)CEO IC = 1mA, IB = 0 V(BR)CIO IC = 10A, IB...
Description	Integrated Circuit Dual, High Frequency, Differential Amplifier
File Size	29.79K / 3 Page	View it Online	Download Datasheet

For 3.2ma. Found Datasheets File :: 17841 Search Time::2.266ms
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