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Vitesse Semiconductor C...
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| Part No. |
VSC7969 VSC7969W
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| OCR Text |
...th signal detect g52355-0, rev 2.0 page 1 02/09/01 ? vitesse semiconductor corporation ? 741 calle plano camarillo, ca 93012 tel:...8a/w. i phs-peak peak input photocurrent sensitivity 8 a -23dbm average optical power with a detect... |
| Description |
3.125Gb/s Integrated Transimpedance and Limiting Amplifier with Signal Detect
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| File Size |
171.67K /
14 Page |
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Quanzhou Jinmei Electro...
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| Part No. |
2SC5287-15 2SC5287-2015
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| OCR Text |
...ing pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ?? ) symbol parame...8a; i b =0.36a 0.5 v v besat base-emitter saturation voltage i c =1.8a; i b =0.36a 1.2 v i ... |
| Description |
Silicon NPN Power Transistors
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| File Size |
67.38K /
4 Page |
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it Online |
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MORE Semiconductor Comp...
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| Part No. |
MSN3402A
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| OCR Text |
2.5v r ds(on) < 45m ? @ v gs =4.5v r ds(on) < 41m ? @ v gs =10v high power and current handing capability lead free product ...8a - 28 41 m ? forward transconductance g fs v ds =5v,i d =5a 10 - - s dynamic charact... |
| Description |
30V(D-S) N-Channel Enhancement Mode Power MOS FET
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| File Size |
385.58K /
6 Page |
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it Online |
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Hi-Sincerity Mocroelect...
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| Part No. |
HJ127
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| OCR Text |
...10 ua vcb=-100v, ie=0 iebo - - -2 ma veb=-5v, ic=0 icex - - -10 ua vce=-100v, vbe(off)=-1.5v *vce(sat)1 - - -2 v ic=-4a, ib=-16ma *vce(sat)2 - - -4 v ic=-8a, ib=-80ma *vbe(sat) - - -4.5 v ic=-8a, ib=-80ma *vbe(on) - - -2.8 v vce=-4v, ic=-4a... |
| Description |
PNP EPITAXIAL PLANAR TRANSISTOR
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| File Size |
30.85K /
3 Page |
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it Online |
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Hi-Sincerity Mocroelect...
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| Part No. |
HJ122
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| OCR Text |
...iceo - - 10 ua vce=50v iebo - - 2 ma veb=5v *vce(sat)1 - - 2 v ic=4a, ib=16ma *vce(sat)2 - - 4 v ic=8a, ib=80ma *vbe(sat) - - 4.5 v ic=8a, ib=80ma *vbe(on) - - 2.8 v vce=4v, ic=4a *hfe1 1 - 12 k vce=4v, ic=4a *hfe2 100 - - vce=4v, ic=8a cob... |
| Description |
NPN EPITAXIAL PLANAR TRANSISTOR
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| File Size |
32.08K /
4 Page |
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it Online |
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Infineon Technologies A...
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| Part No. |
IPN80R1K2P7
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| OCR Text |
2.1,2018-02-08 final data sheet pg-sot223 mosfet 800vcoolmosap7powertransistor thelatest800vcoolmos?p7seriessetsanewbenchmark...8a, t j =25c maximum diode commutation speed 3) di f /dt - - 50 a/ m s v ds =0to400v, i sd <=0.8... |
| Description |
800V CoolMOSa P7 Power Transistor
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| File Size |
1,248.72K /
13 Page |
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it Online |
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