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Infineon
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| Part No. |
SPD31N05 SPU31N05
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| OCR Text |
...90 t c 0 4 8 12 16 20 24 28 a 34 spd31n05 i d transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 3 s t p -2 10 -1 10 0 10 1 10 2 10 k/w ... |
| Description |
N-Channel SIPMOS Power Transistor
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| File Size |
133.13K /
8 Page |
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it Online |
Download Datasheet
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Infineon
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| Part No. |
SPD21N05L SPU21N05L
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| OCR Text |
...s 100 s t p = 28.0 s
spd 21n05l data sheet 6 06.99 typ. output characteristics i d = f ( v ds ) parameter: t p = 80 s 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v 5.0 v ds 0 5 10 15 20 25 30 35 40 a 50 spd21n05l... |
| Description |
N-Channel SIPMOS Power Transistor
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| File Size |
139.79K /
8 Page |
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it Online |
Download Datasheet |
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SIEMENS AG
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| Part No. |
BAS28W
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| OCR Text |
...f ) t a = 25c 0 0 ehb00035 bas 28 0.5 1.0 v 1.5 50 100 ma 150 f f v max typ permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 k/w r thjs permissibl... |
| Description |
Silicon Switching Diode Array(硅开关二极管阵列)
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| File Size |
90.52K /
4 Page |
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it Online |
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SIEMENS AG
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| Part No. |
SPD04N60S5
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| OCR Text |
...j = 25 c 0 4 8 12 16 20 v ds 28 v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 a 4.0 i d 8v 0 4 8 12 16 20 v ds 28 v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 a 4.0 i d 6v 7v 16v 12v 10v drain-source on-resistance r ds(on) = f ( t j ) par... |
| Description |
Cool MOS Power Transistor(COOL MOS??????浣??)
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| File Size |
125.77K /
11 Page |
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it Online |
Download Datasheet |
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Infineon Technologies
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| Part No. |
SPB30N03L
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| OCR Text |
... 25 c, 1) t c = 100 c 30 28 i d a pulsed drain current t c = 25 c i dpulse 120 avalanche energy, single pulse i d = 30 a, v dd ...40mm*40mm*1.5mm epoxy pcb fr4 with 6 cm2 (one layer, 70m thick) copper area for drain connection.... |
| Description |
SIPMOS Power Transistor
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| File Size |
110.52K /
9 Page |
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it Online |
Download Datasheet |
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Infineon Technologies A...
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| Part No. |
SPD30N03
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| OCR Text |
...rge v dd = 24 v, i d = 30 a 28.5 gate charge total v dd = 24 v, i d = 30 a, v gs = 0 to 10 v - 39 60 q g gate plateau voltage v dd = 24 v, i d = 30 a v (plateau) 4.8 - v - reverse diode inverse diode continuous forward current... |
| Description |
SIPMOSò Power Transistor
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| File Size |
109.68K /
8 Page |
View
it Online |
Download Datasheet |
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