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Xian Semipower Electronic Technology Co., Ltd.
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Part No. |
SW7N60D
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OCR Text |
2014. rev.1.0 sw 7 n6 0d features high ruggedness r ds( on ) (max 1.2 ? )@v gs =10v gate charge (typical 30 nc) improved dv/dt capability 100% avalanche tested general description this power mosfet i... |
Description |
N-channel TO-220F MOSFET
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File Size |
589.48K /
5 Page |
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it Online |
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Xian Semipower Electronic Technology Co., Ltd.
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Part No. |
SW50N10
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OCR Text |
2014. rev.1.0 features high ruggedness r ds( on ) (max17 m ? )@v gs =10v gate charge (typical 82 nc) improved dv/dt capability 100% avalanche tested n - channel to - 220 mosfet absolute maximum ratings... |
Description |
N-channel TO-220 MOSFET
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File Size |
710.83K /
5 Page |
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it Online |
Download Datasheet
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Xian Semipower Electronic Technology Co., Ltd.
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Part No. |
SW50CPF06
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OCR Text |
2014. rev.2.0 features ultrafast recovery time low forward voltage drop 150 c operating junction temperature low leakage current designed and qualified according to jedec - jesd47 d iode absolute m... |
Description |
DIODE
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File Size |
605.50K /
4 Page |
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it Online |
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Xian Semipower Electronic Technology Co., Ltd.
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Part No. |
SW120N04M
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OCR Text |
2014. rev.1.0 features high ruggedness r ds( on ) (max5 m ? )@v gs =10v gate charge (typical 57 nc) improved dv/dt capability 100% avalanche tested n - channel to - 220 mosfet absolute maximum ratings ... |
Description |
N-channel TO-220 MOSFET
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File Size |
735.88K /
5 Page |
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it Online |
Download Datasheet
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SamHop Microelectronics
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Part No. |
SP8076EL
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OCR Text |
...er 1.4 www.samhop.com.tw sep,24,2014 1 details are subject to change without notice. tson 3.3 x 3.3 pin 1 sp8076el green product symbol v ds v gs i dm a p d c -55 to 150 i d units parameter 33 27 81 v v 20 t a =25 c gate-source voltage dra... |
Description |
N-Channel Enhancement Mode Field Effect Transistor
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File Size |
104.52K /
8 Page |
View
it Online |
Download Datasheet
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