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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDY100PZ
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| OCR Text |
...nt and Gate Voltage.
2 ID = -0.175a RDS(ON), ON-RESISTANCE (OHM) 1.75 1.5 1.25 1 0.75 0.5 0.25 TA = 25oC
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
ID = -0.35A VGS = -4.5V
1.4
1.2
1
TA = 125oC
0.8
0.6 -50 -25 ... |
| Description |
Single P-Channel (-2.5V) Specified PowerTrench MOSFET
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| File Size |
170.93K /
6 Page |
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POWER-ONE[Power-One]
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| Part No. |
FXP6000-48-S FXP6000 FXP6000-32-S
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| OCR Text |
...30.5 to 33.5V 45.6V to 50.4V
175a 125A
0.2% 0.15%
0.2% 0.2%
31.93V to 32.07V 47.90V to 48.10V
NOTES: 1) With Remote Sense connected. 2) User-selectable input voltage ranges.
Input Specifications
PARAMETER DESCRIPTION/COND... |
| Description |
Distributed Power Front-End
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| File Size |
355.76K /
8 Page |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
HSS81
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| OCR Text |
175a (Z) Rev. 1 Jul. 1995 Features
* High reverse voltage. (VR = 150V) * Suitable for 5mm pitch high speed automatical insertion. * Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No. HSS... |
| Description |
Silicon Epitaxial Planar Diode for High Voltage Switching
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| File Size |
25.63K /
6 Page |
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IRF[International Rectifier]
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| Part No. |
IRF2805SPBF IRF2805LPBF
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| OCR Text |
...ource Current (A)
2.5
I D = 175a
RDS(on) , Drain-to-Source On Resistance
T J = 175C
2.0
100
(Normalized)
1.5
1.0
10 4.0 5.0 6.0
VDS = 25V 20s PULSE WIDTH
7.0 8.0 9.0 10.0
0.5
0.0 -60 -40 -20 0 20 40 60 ... |
| Description |
HEXFET Power MOSFET
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| File Size |
303.28K /
11 Page |
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IRF[International Rectifier]
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| Part No. |
IRF2805
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| OCR Text |
...m
IRF2805
180
3.0
I D = 175a
LIMITED BY PACKAGE
150
2.5
RDS(on) , Drain-to-Source On Resistance
120
2.0
ID , Drain Current (A)
(Normalized)
90
1.5
60
1.0
30
0.5
V GS = 10V
0.0 -60 -40 -20 0 ... |
| Description |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AUTOMOTIVE MOSFET
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| File Size |
148.82K /
9 Page |
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IRF[International Rectifier]
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| Part No. |
IRL7YS1404CM
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| OCR Text |
...0V, RG= 25
ISD 20A, di/dt 175a/s, Pulse width 300 s; Duty Cycle 2%
VDD 40V, TJ 150C
Case Outline and Dimensions -- Low-ohmic TO-257AA
A 10.66 [.420] 10.42 [.410] 3.81 [.150] 3X O 3.56 [.140] 5.08 [.200] 4.83 [.190] 0.13 [.00... |
| Description |
55V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
HEXFET POWER MOSFET THRU-HOLE (Low-ohmic TO-257AA) 40V, N-CHANNEL
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| File Size |
126.64K /
7 Page |
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INTERSIL[Intersil Corporation]
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| Part No. |
ISL6742AAZA-T ISL6742 ISL6742AAZA
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| OCR Text |
...r Line, Load, and Temperature * 175a Start-up Current * Supply UVLO * Adjustable Soft-Start * 70ns Leading Edge Blanking * Multi-Pulse Suppression * Internal Over Temperature Protection
Ordering Information
PART NUMBER ISL6742AAZA (See ... |
| Description |
Advanced Double-Ended PWM Controller
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| File Size |
409.04K /
18 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APTM20AM10ST
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| OCR Text |
...DSon = 10mW max @ Tj = 25C ID = 175a @ Tc = 25C
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge ... |
| Description |
Phase leg Series & parallel diodes MOSFET Power Module
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| File Size |
295.73K /
6 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE5540 NTE5539
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| OCR Text |
...tr = 0.1s), di/dt . . . . . . . 175a/s Gate Controlled Turn-On Time (Gate Pulse = 150mA, Min Width = 15s, tr 0.1s), tgt . . . 2.5s Circuit Commutated Turn-Off Time (Note 1), tq . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... |
| Description |
Silicon Controlled Rectifier (SCR) 55 Amps
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| File Size |
18.61K /
2 Page |
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it Online |
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Price and Availability
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