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Fuji Semiconductors, Inc.
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Part No. |
2SK2648
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OCR Text |
...c=640V 600 500 400V 400 300 200 160v 100 0 20 15 40
10n
Typical capacitances C=f(VDS):VGS=0V,f=1MHz
V 35 60 =1 cc 0V V 40 0V 30 64
1n
25
Ciss
VDS [V]
VGS [V]
C [F]
Coss
100p
Crss
10 5 0 180
10p 10
0
... |
Description |
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,9A I(D),TO-247VAR From old datasheet system
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File Size |
69.48K /
4 Page |
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International Rectifier, Corp. IRF[International Rectifier]
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Part No. |
IRFR13N20D IRFU13N20D IRFR13N20
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OCR Text |
...V, VGS = 0V A --- --- 250 VDS = 160v, VGS = 0V, T J = 150C --- --- 100 VGS = 30V nA --- --- -100 VGS = -30V
Dynamic @ TJ = 25C (unless ot...1.0MHz --- VGS = 0V, V DS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 160v, = 1.0MHz --- VGS = 0V, VDS = ... |
Description |
(IRFR13N20D / IRFU13N20D) Power MOSFET Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)最大值\u003d 0.235ohm,身份证\u003d 13A条) HEXFET? Power MOSFET
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File Size |
178.64K /
10 Page |
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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Part No. |
IRLS630A
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OCR Text |
...A VGS=20V VGS=-20V VDS=200V VDS=160v,TC=125 VGS=5V,ID=3.25A VDS=40V,ID=3.25A
See Fig 7
VDS=VGS, ID=250A
VGS=0V,VDS=25V,f =1MHz S...1.5 --A V ns C
Test Condition Integral reverse pn-diode in the MOSFET TJ=25,IS=6.5A,VGS=0V TJ=25,... |
Description |
Advanced Power MOSFET 6.5 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
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File Size |
279.78K /
7 Page |
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Price and Availability
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