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  1200v-output Datasheet PDF File

For 1200v-output Found Datasheets File :: 3336    Search Time::3.531ms    
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    M57958L

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M57958L
OCR Text ...eries (up to 400A Class) VCES = 1200V Series (up to 200A Class) VCES = 1400V Series (up to 200A Class) 15.5 MAX Test Circuit VIN VIN ...Output Voltage Output Current VI VO IOHP IOLP Output Current Isolation Voltage Junction Temperature ...
Description HYBRID IC FOR DRIVING IGBT MODULES

File Size 31.03K  /  2 Page

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    PM75RSE120

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. PM75RSE120
OCR Text ...overy characteristics. * 3 75A, 1200V Current-sense IGBT for 15kHz switching * 25A, 1200V Current-sense regenerative brake IGBT * Monolithic...Output Supply Voltage Fault Output Current Condition Applied between : VUP1-VUPC VVP1-VVPC, VWP1-VWP...
Description INTELLIGENT POWER MODULES

File Size 128.42K  /  6 Page

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    SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BSM35GB120DN2 035B12N2 C67070-A2111-A70
OCR Text ...dering Code C67070-A2111-A70 1200V 50A VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 50 35 TC =...Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - V...
Description PTSE 25C 25#16 SKT RECP
From old datasheet system
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area)

File Size 110.29K  /  9 Page

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    TE Connectivity, Ltd.
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BSM35GD120D2 035D12D2 C67076-A2506-A17
OCR Text ...dering Code C67076-A2506-A17 1200V 50A VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 50 35 TC =...Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - V...
Description IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) IGBT功率模块(功率模相全桥包括快速滑行二极管
From old datasheet system

File Size 137.33K  /  9 Page

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    Infineon
Part No. BSM35GD120DN2 035D12N2
OCR Text ...6-A2506-A67 C67070-A2506-A67 1200V 50A 1200V 50A VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 50 ...Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - V...
Description IGBT Power Module
From old datasheet system

File Size 123.80K  /  9 Page

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    CM200DY-24 CM200DY-24H

Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Part No. CM200DY-24 CM200DY-24H
OCR Text ...le below -i.e. CM200DY-24H is a 1200V (VCES), 200 Ampere Dual IGBT Module. Type CM Current Rating Amperes 200 VCES Volts (x 50) 24 M ...Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Ri...
Description IGBT Modules:1200V
HIGH POWER SWITCHING USE INSULATED TYPE

File Size 49.09K  /  4 Page

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    FGA25N120ANTD

FAIRCHILD[Fairchild Semiconductor]
Part No. FGA25N120ANTD
OCR Text 1200V NPT Trench IGBT August 2005 FGA25N120ANTD 1200V NPT Trench IGBT Features * NPT Trench Technology, Positive temperature coeffi...Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---3700 130 80 ---pF p...
Description 1200V NPT-Trench IGBT Using Fairchild's proprietary trench design and advanced NPT technology
1200V NPT Trench IGBT

File Size 863.48K  /  9 Page

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    IR2213S

International Rectifier
Part No. IR2213S
OCR Text ...operation Fully operational to +1200V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 12 to 20V Undervoltag...output channels. Proprietary HVIC and latch immune CMOS technologies enable 16-Lead SOIC (wide body)...
Description HIGH POWER RECTIFIER DIODES

File Size 134.59K  /  11 Page

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    IRG4PH40UD IRG4PH40UD-E

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4PH40UD IRG4PH40UD-E
OCR Text ...UltraFast CoPack IGBT VCES = 1200V G E VCE(on) typ. = 2.43V @VGE = 15V, IC = 21A n-ch an nel Benefits * Higher switching freq...Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recov...
Description 41 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极型晶体管,超快软恢复二极管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package

File Size 217.13K  /  10 Page

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    IRGP20B120U-E

IRF[International Rectifier]
Part No. IRGP20B120U-E
OCR Text ... UltraFast IGBT C VCES = 1200V G E VCE(on) typ. = 3.05V VGE = 15V, IC = 20A, 25C Benefits * Benchmark efficiency above 20KHz...Output Capacitance Reverse Transfer Capacitance Min. Typ. 169 24 82 850 425 Max. Units Cond...
Description 1200V UltraFast 5-40 kHz Single IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR

File Size 105.27K  /  10 Page

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For 1200v-output Found Datasheets File :: 3336    Search Time::3.531ms    
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