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11-channel Datasheet PDF File

For 11-channel Found Datasheets File :: 106673 Search Time::4.672ms
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				IRF[International Rectifier]
Part No.	IRF1404L IRF1404S
OCR Text	...junction temperature. (See fig. 11) Starting TJ = 25C, L = 0.12mH RG = 25, I AS = 95A. (See Figure 12) Coss eff. is a fixed capacitance...channel HEXFET(R) Power MOSFETs www.irf.com 7 IRF1404S/L D2Pak Package Outline D2Pak Pa...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A)
File Size	237.30K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1404
OCR Text	...junction temperature. (See fig. 11) Starting TJ = 25C, L = 0.12mH RG = 25, I AS = 95A. (See Figure 12) Pulse width 300s; duty cycl...channel HEXFET(R) Power MOSFETs www.irf.com 7 IRF1404 TO-220AB Package Outline Dimensions...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A) Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A)
File Size	105.33K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1405L IRF1405S
OCR Text	...its C/W www.irf.com 1 1/11/01 IRF1405S/L Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/...Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform ...
Description	Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A? Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=131A) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?) 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	153.38K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1704
OCR Text	...junction temperature. (See Fig. 11) Starting TJ = 25C, L = 0.13mH, VGS = 10V RG = 25, IAS = 100A. (See Figure 12) ISD 100A, di/dt 150A/s...Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform ...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A) POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?) Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)
File Size	100.05K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1902 IRF1B902 IRF1902TR
OCR Text	...Units C/W www.irf.com 1 11/15/01 IRF1902 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-t...
Description	20V Single N-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=20V)
File Size	105.83K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF2204
OCR Text	...lar Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF2204 900 15V...Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reve...
Description	40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package AUTOMOTIVE MOSFET
File Size	138.67K / 9 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	... VDS = 25V, f = 1.0MHz, (Figure 11) MIN - TYP 600 180 52 5.0 MAX - UNITS pF pF pF nH Internal Source Inductance LS - 12.5 - nH Therma Resistance Junction to Case Therma Resistance Junction to Ambient RJC ...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF244 IRF245 IRF246 IRF247
OCR Text	..., VDS = 25V, f = 1.0MHz (Figure 11) MIN - TYP 1300 320 69 5.0 MAX - UNITS pF pF pF nH Internal Source Inductance LS G LS S 12.5 - nH Junction to Case Junction to Ambient RJC RJA Free Air Operation - ...
Description	14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs
File Size	70.04K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text	...junction temperature. (See fig. 11) Starting TJ = 25C, L = 370H RG = 25, IAS = 43A, VGS=10V (See Figure 12) ISD 43A, di/dt 300A/s, VDD ...Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform ...
Description	HEXFET Power MOSFET HEXFET功率MOSFET 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
File Size	122.50K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF2807
OCR Text	...junction temperature. (See fig. 11) Pulse width 400s; duty cycle 2%. This is a typical value at device destruction and represents op...Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform ...
Description	Power MOSFET(Vdss=75V, Id=82A?) Power MOSFET(Vdss=75V, Id=82A)
File Size	149.88K / 8 Page	View it Online	Download Datasheet

For 11-channel Found Datasheets File :: 106673 Search Time::4.672ms
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