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Alpha & Omega Semiconductor
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Part No. |
AOTF11N60
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OCR Text |
10v) 11a r ds(on) (at v gs =10v) < 0.65 100% uis tested 100% r g tested symbol v ds v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r ja r cs r jc * drain current limited by maximum junction tempera... |
Description |
Single Hv MOSFETs (500v - 1000v)
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File Size |
352.46K /
6 Page |
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Alpha & Omega Semiconductor
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Part No. |
AOK5N100
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OCR Text |
10v) 4a r ds(on) (at v gs =10v) < 4.2 100% uis tested 100% r g tested for halogen free add "l" suffix to part number: aok5n100l the aok5n100 is fabricated using an advanced high voltage mosfet process that is designed to delive... |
Description |
Single Hv MOSFETs (500v - 1000v)
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File Size |
298.78K /
5 Page |
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it Online |
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Alpha & Omega Semiconductor
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Part No. |
AOD9N50 AOI9N50
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OCR Text |
10v) 9a r ds(on) (at v gs =10v) < 0.86 100% uis tested! 100% r g tested! symbol v ds the aod9n50 & aoi9n50 have been fabricated using an advanced high voltage mosfet process that is design ed to deliver high levels of performance and... |
Description |
Single Hv MOSFETs (500v - 1000v)
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File Size |
349.60K /
6 Page |
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SGS Thomson Microelectronics
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Part No. |
STY34NB50F
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OCR Text |
...rain-source on resistance v gs =10v i d = 17 a 0.11 0.14 w i d(o n) on state drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 34 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i ... |
Description |
N - CHANNEL 500v - 0.11Ohm - 34 A - Max247 PowerMESH MOSFET
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File Size |
87.37K /
8 Page |
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Alpha & Omega Semiconductor
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Part No. |
AO4404B
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OCR Text |
10v) 8.5a r ds(on) (at v gs =10v) < 24m r ds(on) (at v gs = 4.5v) < 30m r ds(on) (at v gs = 2.5v) < 48m 100% uis tested 100% r g tested symbol v ds drain-source voltage 30 the ao4404b uses advanced trench technology to pr... |
Description |
Single Lv MOSFETs (12v - 30v)
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File Size |
579.99K /
6 Page |
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it Online |
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Alpha & Omega Semiconductor
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Part No. |
AO4294A
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OCR Text |
10v) 11.5a r ds(on) (at v gs =10v) < 12m r ds(on) (at v gs =4.5v) < 15.5m applications 100% uis tested 100% rg tested symbol v ds v gs i dm i as avalanche energy l=0.1mh c e as t j , t stg symbol t 10s steady-state stea... |
Description |
Single Mv MOSFETs (40v - 400v)
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File Size |
320.46K /
5 Page |
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it Online |
Download Datasheet
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