| |
|
 |
Samsung semiconductor
|
| Part No. |
K7J161882B
|
| OCR Text |
... rev. no. 0.0 0.1 0.2 0.3 0.4 0.5 0.6 1.0 2.0 3.0 3.1 remark advance preliminary pre...9m,9l 9j,10g,9f,10d,9c,9b,3b,3c,2d,3f,2g,3j,3l,3m,2n 1c,1d,2e,1g,1j,2k,1m,1n,2p data inputs q0-35 11... |
| Description |
(K7J161882B / K7J163682B) 512Kx36 & 1Mx18 DDR II SIO b2 SRAM
|
| File Size |
418.03K /
17 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Maxim
|
| Part No. |
MAX8720EVKIT
|
| OCR Text |
0; 6/04
MAX8720 Evaluation Kit
General Description
The MAX8720 evaluation kit (EV kit) demonstrates the high-power, dynamically adjusta...9m low-ESR polymer capacitors (D case) Sanyo 2R5TPE470M9 DESIGNATION QTY DESCRIPTION 10F 20%, 6.3V X... |
| Description |
Evaluation Kit for the MAX8720
From old datasheet system
|
| File Size |
590.26K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
Cypress Semiconductor Corp.
|
| Part No. |
CY7C1353G-117AXC
|
| OCR Text |
...7.5 ns (for 117-mhz device) ? 8.0 ns (for 100-mhz device) ? clock enable (cen ) pin to suspend operation ? synchronous self-timed writes ? a...9m adv/ld zz mode nc / 72m cy7c1353g byte a byte b
preliminary cy7c1353g document #: 38-05515 r... |
| Description |
4-Mbit (256K x 18) Flow-through SRAM with NoBLArchitecture 4兆位56 × 18）流通过总线延迟⑩建筑的SRAM
|
| File Size |
217.30K /
13 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
