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  0.40-15v Datasheet PDF File

For 0.40-15v Found Datasheets File :: 46172    Search Time::2.859ms    
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    6MBI75VW-120-50

Fuji Electric
Part No. 6MBI75VW-120-50
OCR Text ...= 0v , v ce = 12 00v - - 1.0 ma gate-emitter leakage current i ges v ge = 0v , v ge = 20v - - 200 na gate-emitter threshold volt...40 c ies c oes c res 0 25 0 50 0 750 v g e v c e 4 6mbi75vw-120-50 4 igbt modules g a t e r e s ...
Description IGBT MODULE

File Size 612.27K  /  6 Page

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    IRF3805 IRF3805L IRF3805S

International Rectifier
Part No. IRF3805 IRF3805L IRF3805S
OCR Text ...ion-to-Ambient Typ. Max. 0.45 --- 62 40 Units C/W Junction-to-Ambient (PCB Mount) j i i --- 0.50 --- --- www.irf.com 1 10/21/04 IRF3805/S/L Electrical Characteristics @ TJ = 25C (unless otherwise specified)...
Description AUTOMOTIVE MOSFET

File Size 358.50K  /  12 Page

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    IRF3808L IRF3808S RF3808S

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3808L IRF3808S RF3808S
OCR Text ... VDSS = 75V G S RDS(on) = 0.007 ID = 106AV Description Designed specifically for Automotive applications, this Advanced Planar Str...40 Units C/W HEXFET(R) is a registered trademark of International Rectifier. www.irf.com ...
Description 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)
Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET(减振钢板基本\u003d 75V的,的Rdson)\u003d 0.007ohm,身份证\u003d 106A章?

File Size 159.77K  /  11 Page

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    IRF3808 IRF3808PBF

International Rectifier
Part No. IRF3808 IRF3808PBF
OCR Text ... VDSS = 75V G S RDS(on) = 0.007 ID = 140AV Description Designed specifically for Automotive applications, this Advanced Planar Str...40 -20 0 20 40 60 80 V GS = 10V 100 120 140 160 180 TJ , Junction Temperature ( C) VGS...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?

File Size 129.31K  /  9 Page

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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ...l D VDSS = -55V RDS(on) = 0.02 G ID = -74A S Fifth Generation HEXFETs from International Rectifier utilize advanced processi...40 Units C/W 8/25/97 IRF4905S/L Electrical Characteristics @ TJ = 25C (unless otherwise spec...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 159.46K  /  10 Page

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ... VDSS = -55V G S RDS(on) = 0.02 ID = -74A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniqu...40 -20 0 20 40 60 80 VG S = -10 V 100 120 140 160 180 A -VG S , Ga te-to-S o urce V olta...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.67K  /  8 Page

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ...l D VDSS = -55V RDS(on) = 0.06 G ID = -31A S Fifth Generation HEXFETs from International Rectifier utilize advanced processi...40 Units C/W 4/1/99 IRF5305S/L Electrical Characteristics @ TJ = 25C (unless otherwise sp...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 167.31K  /  10 Page

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...d D VDSS = -55V RDS(on) = 0.06 G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize adva...40 -20 0 20 40 60 80 V G S = -10 V 100 120 140 160 180 A -V G S , G ate -to-Source Volta...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

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    6MBI75VW-060-50

Fuji Electric
Part No. 6MBI75VW-060-50
OCR Text ... = 0v , v ce = 600v - - 1.0 ma gate-emitter leakage current i ges v ge = 0v , v ge = 20v - - 200 na gate-emitter threshold vo...40 c ies c oes c res 0 10 0 20 0 30 0 40 0 50 0 600 v g e v c e 4 6 mbi75vw-060-50 4 igbt modules ...
Description IGBT MODULE

File Size 495.97K  /  6 Page

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    6MBI50VW-120-50

Fuji Electric
Part No. 6MBI50VW-120-50
OCR Text ...= 0v , v ce = 12 00v - - 1.0 ma gate-emitter leakage current i ges v ge = 0v , v ge = 20v - - 200 na gate-emitter threshold volt...40 50 0 1 2 3 4 5 v g e = 20v 15v 12v 10v 8v 0 10 20 30 40 50 0 1 2 3 4 5 15v 12v 10v 8v v g e = 20v...
Description IGBT MODULE

File Size 614.56K  /  6 Page

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