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  0.14a Datasheet PDF File

For 0.14a Found Datasheets File :: 2894    Search Time::2.5ms    
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    NTE2936

NTE[NTE Electronics]
Part No. NTE2936
OCR Text ...Operating Area D Lower RDS(on): 0.308 Typ D Lower Leakage Current: 10A (Max) @ VDS = 500V Absolute Maximum Ratings: Drain-to-Source Voltage,...14A, di/dt 230A/s, VDD V(BR)DSS, Starting TJ = +25C. Electrical Characteristics: (TC = +25C unl...
Description MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 23.31K  /  3 Page

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    NTE2942

NTE Electronics, Inc.
NTE[NTE Electronics]
Part No. NTE2942
OCR Text .... . . . . . . . . . . . . . . . 0.28W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....14A, VGS = 0V, Note 4 TJ = +25C, IF = 14A, dIF/dt = 100A/s VGS = 10V, ID = 14A, VDS = 0.8 Max. Ratin...
Description 30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET
MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 25.15K  /  3 Page

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    NTE2943

NTE[NTE Electronics]
Part No. NTE2943
OCR Text .... . . . . . . . . . . . . . . . 0.32W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....14A, Note 4 VDS 50V, ID = 14A, Note 4 VGS = 0V, VDS = 25V, f = 1MHz Min 100 2.0 - - - - - 8.7 - - -...
Description MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 25.27K  /  3 Page

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    NTE2956

NTE[NTE Electronics]
Part No. NTE2956
OCR Text ...est Conditions Min 500 30 - - 2.0 - - 4.5 Typ - - - - 3.0 0.63 4.41 7.0 Max - - 10 1.0 4.0 0.80 5.60 - Unit V V A mA V V S V(BR)DSS VDS = 0V, ID = 1mA V(BR)GSS VDS = 0V, IG = 100A IGSS IDSS VGS(th) RDS(on) VDS(on) |yfs| VGS = 25V, VDS = 0V...
Description MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 21.25K  /  2 Page

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    NTE2973 NTE2971

NTE[NTE Electronics]
Part No. NTE2973 NTE2971
OCR Text .... . . . . . . . . . . . . . . . 0.45C/W Electrical Characteristics: (Tch = +25C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate-Source Breakdown Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Gate Thr...
Description MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 20.36K  /  2 Page

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    NTE2987

NTE[NTE Electronics]
Part No. NTE2987
OCR Text ...ic Level Gate Drive D RDS(on) = 0.09 Typ. at VGS = 5V D +175C Operating Temperature D Fast Switching D Low Gate Charge D High Current Capabi...14A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 26.19K  /  3 Page

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    NTE507

NTE[NTE Electronics]
Part No. NTE507
OCR Text ...t = 10A/s Min - - - - - - Typ 1.0 1.0 1.0 50 150 1.0 Max 1.2 1.2 5.0 100 200 2.0 Unit V V A A ns A IRM(REC) IF = 1A to VR = 30V 1.100 (27.94) Min .210 (5.33) Max .034 (0.87) Dia Max Color Band Denotes Cathode .107 (2.72) Dia ...
Description Silicon Rectifier Diode

File Size 17.19K  /  1 Page

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    NTE5368 NTE5369

NTE[NTE Electronics]
Part No. NTE5368 NTE5369
OCR Text ...ristic) . . . . . . . . . . . . 0.23C/W Absolute Maximum Ratings (Cont'd): (TJ = +125C unless otherwise specified) Peak On-State Voltage (ITM = 280A), VTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description Silicon Controlled Rectifier (SCR) 125 Amp

File Size 18.74K  /  2 Page

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    2SC5763 2SC5763M 2SC5763N

SANYO SEMICONDUCTOR CO LTD
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Sanyo Electric Co., Ltd.
Part No. 2SC5763 2SC5763M 2SC5763N
OCR Text ...IT process. 4.5 1.3 18.0 5.6 1.2 14.0 0.8 123 2.7 15.1 0.4 1 : Base 2 : Collector 3 : Emitter 2.55 Specific...14A IC=7A DC 1m Collector Current, IC -- A 5 7 10 IT03057 0.1 0.1 2 3 5 7 ...
Description 7 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220
Switching Regulator Applications
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 7A I(C) | TO-220AB
Low-Power, Single/Dual-Voltage &#181;P Reset Circuits with Capacitor-Adjustable Reset Timeout Delay 晶体管|晶体管|叩| 400V五(巴西)总裁| 7A条一(c)| TO - 220AB现有

File Size 32.56K  /  4 Page

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    STGB7NB40LZ

STMICROELECTRONICS[STMicroelectronics]
Part No. STGB7NB40LZ
OCR Text ...ollector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at 100C Minimum External Gate Resistor Total Dissipation at TC = 25C Derating Factor Single Pulse Collector to Emitter Avalanc...
Description N-CHANNEL CLAMPED 14A - D2PAK INTERNALLY CLAMPED PowerMESH⑩ IGBT
N-CHANNEL CLAMPED 14A - D2PAK INTERNALLY CLAMPED PowerMESH IGBT

File Size 390.22K  /  8 Page

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