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  0.12-15v Datasheet PDF File

For 0.12-15v Found Datasheets File :: 46756    Search Time::9.203ms    
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    IRF3805 IRF3805L IRF3805S

International Rectifier
Part No. IRF3805 IRF3805L IRF3805S
OCR Text ...ion-to-Ambient Typ. Max. 0.45 --- 62 40 Units C/W Junction-to-Ambient (PCB Mount) j i i --- 0.50 --- --- www.irf.c...12 8 Coss Crss 4 0 0 50 100 150 200 250 300 QG Total Gate Charge (nC) VDS , Drain-to-...
Description AUTOMOTIVE MOSFET

File Size 358.50K  /  12 Page

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    IRF3808L IRF3808S RF3808S

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3808L IRF3808S RF3808S
OCR Text ... VDSS = 75V G S RDS(on) = 0.007 ID = 106AV Description Designed specifically for Automotive applications, this Advanced Planar Str...12). S ISD 82A, di/dt 310A/s, VDD V(BR)DSS, TJ 175C T Pulse width 400s; duty cycle 2%. Para...
Description 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)
Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET(减振钢板基本\u003d 75V的,的Rdson)\u003d 0.007ohm,身份证\u003d 106A章?

File Size 159.77K  /  11 Page

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    IRF3808 IRF3808PBF

International Rectifier
Part No. IRF3808 IRF3808PBF
OCR Text ... VDSS = 75V G S RDS(on) = 0.007 ID = 140AV Description Designed specifically for Automotive applications, this Advanced Planar Str...12). S ISD 82A, di/dt 310A/s, VDD V(BR)DSS, TJ 175C T Pulse width 400s; duty cycle 2%. U Co...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?

File Size 129.31K  /  9 Page

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    IRF460

SEME-LAB[Seme LAB]
Part No. IRF460
OCR Text 0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 22.23 (0.875) max. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 1 2 ...
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 16.77K  /  2 Page

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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ...l D VDSS = -55V RDS(on) = 0.02 G ID = -74A S Fifth Generation HEXFETs from International Rectifier utilize advanced processi...12) TJ 175C ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 159.46K  /  10 Page

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ... VDSS = -55V G S RDS(on) = 0.02 ID = -74A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniqu...12) Pulse width 300s; duty cycle 2%. IRF4905 1000 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.67K  /  8 Page

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ...l D VDSS = -55V RDS(on) = 0.06 G ID = -31A S Fifth Generation HEXFETs from International Rectifier utilize advanced processi...12) TJ 175C ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 167.31K  /  10 Page

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...d D VDSS = -55V RDS(on) = 0.06 G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize adva...12) Pulse width 300s; duty cycle 2%. 2 www.irf.com IRF5305 1000 VGS - 15V - 10V - 8...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

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    IRF530A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF530A
OCR Text ....) @ VDS = 100V Lower RDS(ON) : 0.092 (Typ.) IRF530A BVDSS = 100 V RDS(on) = 0.11 ID = 14 A TO-220 1 2 3 1.Gate 2. Drain 3. So...12.8 --4.0 100 -100 10 100 0.11 -790 175 72 40 40 110 80 36 --nC ns pF A V Test Condition VGS...
Description N-CHANNEL POWER MOSFET
Advanced Power MOSFET

File Size 253.11K  /  7 Page

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ... VDSS =100V G S RDS(on) = 0.11 ID = 17A Description Fifth Generation HEXFETs from International Rectifier utilize advanced process...12 60 3.8 79 0.53 20 150 A 7.9 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ mJ ...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

File Size 174.65K  /  10 Page

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