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  -4m Datasheet PDF File

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    CY7C1480BV25 CY7C1480BV25-167AXC CY7C1480BV25-167AXI CY7C1480BV25-167BZC CY7C1480BV25-167BZI CY7C1480BV25-167BZXC CY7C14

Cypress Semiconductor
Part No. CY7C1480BV25 CY7C1480BV25-167AXC CY7C1480BV25-167AXI CY7C1480BV25-167BZC CY7C1480BV25-167BZI CY7C1480BV25-167BZXC CY7C1480BV25-167BZXI CY7C1480BV25-200AXC CY7C1480BV25-200AXI CY7C1480BV25-200BZC CY7C1480BV25-200BZI CY7C1480BV25-200BZXC CY7C1480BV25-200BZXI CY7C1480BV25-250AXC CY7C1480BV25-250AXI CY7C1480BV25-250BZC CY7C1480BV25-250BZI CY7C1480BV25-250BZXC CY7C1480BV25-250BZXI
OCR Text 4M x 18/1M x 72) Pipelined Sync SRAM Features Functional Description The CY7C1480BV25/CY7C1482BV25/CY7C1486BV25[1] SRAM integrates 2M x 36/4M x 18/1M x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit c...
Description 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM

File Size 722.05K  /  31 Page

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    CY7C1480V25 CY7C1480V25-250BZI CY7C1486V25-200BGI CY7C1486V25-200BGC CY7C1486V25-250BGC CY7C1486V25-167BGXC CY7C1486V25-

Cypress Semiconductor
Part No. CY7C1480V25 CY7C1480V25-250BZI CY7C1486V25-200BGI CY7C1486V25-200BGC CY7C1486V25-250BGC CY7C1486V25-167BGXC CY7C1486V25-200BGXI CY7C1486V25-250BGI CY7C1480V25-250BZXC CY7C1482V25-250BZXC
OCR Text 4M x 18/1M x 72) Pipelined Sync SRAM Features * * * * * * Supports bus operation up to 250 MHz Available speed grades are 250, 200, and 167 MHz Registered inputs and outputs for pipelined operation 2.5V core power supply 2.5V/1.8V IO oper...
Description 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM

File Size 1,092.54K  /  32 Page

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    DS1402D-41

Maxim Integrated Products
Part No. DS1402D-41
OCR Text ...02d-db8+, ds1402d- dr8+, each 2.4m max.) ? touch-and-hold probes ds1402-bp8+, ds1402-rp3+ and ds1402-rp8+ for momentary touch (f3/f5 microcan) or dwelled contact (f5 mi crocan only) in 2.4m length max. ? ibutton cable (ds1402-br8)...
Description 1-Wire Network Cables

File Size 148.87K  /  3 Page

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    K4S641632H-TL70 K4S641632H-TC70 K4S641632H-TC75 K4S641632H-TC60 K4S640832H-TC75 K4S641632H-L60 K4S640432H-TC K4S640432H-

Samsung semiconductor
Samsung Electronic
Part No. K4S641632H-TL70 K4S641632H-TC70 K4S641632H-TC75 K4S641632H-TC60 K4S640832H-TC75 K4S641632H-L60 K4S640432H-TC K4S640432H-TC75 K4S640432H-L75 K4S640832H-L75 K4S641632H-L70 K4S641632H-L75 K4S640432H-TL75 K4S640832H-TL75 K4S641632H-TL60 K4S641632H-TL75
OCR Text ... (x4, x8, x16) CMOS SDRAM 4M x 4Bit x 4 / 2M x 8Bit x 4 / 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES * JEDEC standard 3.3V power supply * LVTTL compatible with multiplexed address * Four banks operation * MRS cycle with address ...
Description 64Mb H-die SDRAM Specification

File Size 142.04K  /  14 Page

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    H5MS1222EFP-L3E H5MS1222EFP-L3M H5MS1222EFP-J3E H5MS1222EFP-J3M H5MS1222EFP-K3E H5MS1222EFP-K3M H5MS1222EFP-Q3E H5MS1222

HYNIX SEMICONDUCTOR INC
Part No. H5MS1222EFP-L3E H5MS1222EFP-L3M H5MS1222EFP-J3E H5MS1222EFP-J3M H5MS1222EFP-K3E H5MS1222EFP-K3M H5MS1222EFP-Q3E H5MS1222EFP-Q3M HYNIXSEMICONDUCTORINC-H5MS1222EFP-Q3E
OCR Text ... 1 Mobile DDR SDRAM 128Mbit (4M x 32bit) H5MS1222EFP Series Document Title 128MBit (4Bank x 1M x 32bits) MOBILE DDR SDRAM Revision History Revision No. 0.1 0.2 0.3 0.4 1.0 - Initial Draft - Define IDD specification - Correct tRE...
Description 128Mbit MOBILE DDR SDRAM based on 1M x 4Bank x32 I/O
4M X 32 DDR DRAM, PBGA90

File Size 1,786.62K  /  62 Page

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    LT3473A LT3580 LT1946A LT8410 LT8410-1 LT8415 LT8415-15

Linear Technology
Linear Dimensions Semiconductor
Part No. LT3473A LT3580 LT1946A LT8410 LT8410-1 LT8415 LT8415-15
OCR Text ...during shutdown. High value (12.4M/0.4M) resistors are integrated on chip for output voltage detection, significantly reducing input referred quiescent current. The LT8415 also features a comparator built into the SHDN pin, overvoltage prot...
Description Ultralow Power Boost Converter with Dual Half-Bridge Switches

File Size 178.60K  /  12 Page

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    HM5117405LS-5 HM5117405LS-6 HM5117405LS-7 HM5117405LTS-5 HM5117405LTS-6 HM5117405LTS-7 HM5117405S-5 HM5117405S-6 HM51174

Elpida Memory
Part No. HM5117405LS-5 HM5117405LS-6 HM5117405LS-7 HM5117405LTS-5 HM5117405LTS-6 HM5117405LTS-7 HM5117405S-5 HM5117405S-6 HM5117405S-7 HM5116405TS-6 HM5116405TS-5 HM5117405TS-5 HM5116405TS-7 HM5117405TS-6 HM5117405TS-7 HM5116405LS-7 HM5116405 HM5116405LTS-5 HM5116405LS-6 HM5116405LS-5 HM5116405LTS-7 HM5116405S-5 HM5116405LTS-6 HM5117405
OCR Text ...ss buffers Column decoder 4M array 4M array I/O buffers 4M array I/O1 to I/O4 Data Sheet E0151H10 5 ro 4M array du ct HM5116405 Series, HM5117405 Series Block Diagram (HM5117405 Series) RAS CAS WE OE Row decoder...
Description 16 M EDO DRAM (4-Mword 垄楼 4-bit) 4 k Refresh/2 k Refresh
16 M EDO DRAM (4-Mword ′ 4-bit) 4 k Refresh/2 k Refresh

File Size 558.47K  /  34 Page

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    CY7C1525KV18-300BZC CY7C1525KV18-300BZI CY7C1525KV18-300BZXC CY7C1525KV18-300BZXI CY7C1525KV18-333BZC CY7C1525KV18-333BZ

Cypress Semiconductor
Part No. CY7C1525KV18-300BZC CY7C1525KV18-300BZI CY7C1525KV18-300BZXC CY7C1525KV18-300BZXI CY7C1525KV18-333BZC CY7C1525KV18-333BZI CY7C1525KV18-333BZXC CY7C1525KV18-333BZXI
OCR Text ...525KV18 - 8M x 9 CY7C1512KV18 - 4M x 18 CY7C1514KV18 - 2M x 36 Separate Independent Read and Write Data Ports Supports concurrent transactions 333 MHz Clock for High Bandwidth 2-word Burst on all Accesses Double Data Rate (DDR) Interfac...
Description 72-Mbit QDR-II SRAM 2-Word Burst Architecture

File Size 551.37K  /  30 Page

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    CY7C1510AV1807

Cypress Semiconductor
Part No. CY7C1510AV1807
OCR Text ...525AV18 - 8M x 9 CY7C1512AV18 - 4M x 18 CY7C1514AV18 - 2M x 36 Separate independent read and write data ports Supports concurrent transactions 250 MHz clock for high bandwidth 2-word burst on all accesses Double Data Rate (DDR) interfac...
Description 72-Mbit QDR⑩-II SRAM 2-Word Burst Architecture

File Size 409.38K  /  28 Page

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